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Issue 31, 2012
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The role of Ga in Ba0.30GaxCo4Sb12+x filled skutterudites

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Abstract

Ba0.30GaxCo4Sb12+x (x = 0–0.30) skutterudite compounds were synthesized using a melt–quench–anneal–SPS method and the effect of the content of Ga on the structure and thermoelectric properties was investigated. In samples with Ga content x ≤ 0.15, Ga enters the skutterudite voids and its presence seems to stimulate a more homogeneous distribution of the filler species. Samples with Ga content x ≥ 0.20 possess uniformly dispersed nanoinclusions consisting of circular domains of GaSb with a diameter of 20 nm. As the content of Ga increases, the carrier concentration decreases, the Seebeck coefficient increases, and the heat transport is progressively more impeded. The thermoelectric figure of merit of Ba0.30GaxCo4Sb12+x is strongly enhanced in comparison to that of Ba0.30Co4Sb12 and reaches values in excess of 1.35 at 850 K for Ba0.30Ga0.30Co4Sb12.30, approximately twice the value of the Ba0.30Co4Sb12 sample.

Graphical abstract: The role of Ga in Ba0.30GaxCo4Sb12+x filled skutterudites

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Publication details

The article was received on 18 Mar 2012, accepted on 18 Jun 2012 and first published on 18 Jun 2012


Article type: Paper
DOI: 10.1039/C2JM31677C
Citation: J. Mater. Chem., 2012,22, 15628-15634
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    The role of Ga in Ba0.30GaxCo4Sb12+x filled skutterudites

    X. Su, H. Li, Y. Yan, H. Chi, X. Tang, Q. Zhang and C. Uher, J. Mater. Chem., 2012, 22, 15628
    DOI: 10.1039/C2JM31677C

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