High-yield, large-scale production of few-layer graphene flakes within seconds: using chlorosulfonic acid and H2O2 as exfoliating agents†
Abstract
The present communication reports on a rapid exfoliation method for high-yield production of few-layer
* Corresponding authors
a State Key Lab of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, Jilin, China
b Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
c Chemistry Department, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
d
Center of Excellence for Advanced Materials Research, King Abdulaziz University, Jeddah 21589, Saudi Arabia
E-mail:
sunxp@ciac.jl.cn
Fax: +86-431-85262065
Tel: +86-431-85262065
The present communication reports on a rapid exfoliation method for high-yield production of few-layer
Please wait while we load your content...
Something went wrong. Try again?
W. Lu, S. Liu, X. Qin, L. Wang, J. Tian, Y. Luo, A. M. Asiri, A. O. Al-Youbi and X. Sun, J. Mater. Chem., 2012, 22, 8775 DOI: 10.1039/C2JM16741G
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content