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Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors

Y. Chen,a   B. Lee,a   H. T. Yi,a   S. S. Lee,b   M. M. Payne,c   S. Pola,d   C.-H. Kuo,d   Y.-L. Loo,b   J. E. Anthony,c   Y. T. Taod and   V. Podzorov*ae  
Corresponding authors
Department of Physics and Astronomy, Rutgers University, Piscataway, USA
Department of Chemical and Biological Engineering, Princeton University, Princeton, USA
Department of Chemistry, University of Kentucky, Lexington, USA
Institute of Chemistry, Academia Sinica, Taipei, Taiwan
Institute for Advanced Materials and Devices for Nanotechnology, Rutgers University, Piscataway, USA
Phys. Chem. Chem. Phys., 2012,14, 14142-14151

DOI: 10.1039/C2CP41823A
Received 31 May 2012, Accepted 20 Jul 2012
First published online 20 Jul 2012

This article is part of themed collection: Organic electronics - new physical chemistry insight
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