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Issue 32, 2012
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Thin silica films on Ru(0001): monolayer, bilayer and three-dimensional networks of [SiO4] tetrahedra

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Abstract

The atomic structure of thin silica films grown over a Ru(0001) substrate was studied by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, low energy electron diffraction, helium ion scattering spectroscopy, CO temperature programmed desorption, and scanning tunneling microscopy in combination with density functional theory calculations. The films were prepared by Si vapor deposition and subsequent oxidation at high temperatures. The silica film first grows as a monolayer of corner-sharing [SiO4] tetrahedra strongly bonded to the Ru(0001) surface through the Si–O–Ru linkages. At increasing amounts of Si, the film forms a bilayer of corner-sharing [SiO4] tetrahedra which is weakly bonded to Ru(0001). The bilayer film can be grown in either the crystalline or vitreous state, or both coexisting. Further increasing the film thickness leads to the formation of vitreous silica exhibiting a three-dimensional network of [SiO4]. The principal structure of the films can be monitored by infrared spectroscopy, as each structure shows a characteristic vibrational band, i.e., ∼1135 cm−1 for a monolayer film, ∼1300 cm−1 for the bilayer structures, and ∼1250 cm−1 for the bulk-like vitreous silica.

Graphical abstract: Thin silica films on Ru(0001): monolayer, bilayer and three-dimensional networks of [SiO4] tetrahedra

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Publication details

The article was received on 27 Apr 2012, accepted on 26 Jun 2012 and first published on 16 Jul 2012


Article type: Paper
DOI: 10.1039/C2CP41355H
Citation: Phys. Chem. Chem. Phys., 2012,14, 11344-11351
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    Thin silica films on Ru(0001): monolayer, bilayer and three-dimensional networks of [SiO4] tetrahedra

    B. Yang, W. E. Kaden, X. Yu, J. A. Boscoboinik, Y. Martynova, L. Lichtenstein, M. Heyde, M. Sterrer, R. Włodarczyk, M. Sierka, J. Sauer, S. Shaikhutdinov and H. Freund, Phys. Chem. Chem. Phys., 2012, 14, 11344
    DOI: 10.1039/C2CP41355H

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