FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors†
Abstract
Hole mobility was evaluated by top-contact bottom gate field effect transistor and
* Corresponding authors
a
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan
E-mail:
hyamada@ms.naist.jp
Fax: +81 743-724-6042
b CREST, JST, 7 Goban-cho, Chiyoda-ku 102-0076, Japan
c
Department of Organic Device Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa 992-8510, Japan
E-mail:
nakayama@yz.yamagata-u.ac.jp
Fax: +81 238-26-3713
d
Department of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Japan
E-mail:
seki@chem.eng.osaka-u.ac.jp
Fax: +81 6-6879-4586
e Department of Chemistry and Biology, Graduate School of Science and Engineering, Ehime University, Matsuyama, Japan
Hole mobility was evaluated by top-contact bottom gate field effect transistor and
H. Yamada, C. Ohashi, T. Aotake, S. Katsuta, Y. Honsho, H. Kawano, T. Okujima, H. Uno, N. Ono, S. Seki and K. Nakayama, Chem. Commun., 2012, 48, 11136 DOI: 10.1039/C2CC35439J
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content