Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches

Liu Hongwei; Sun Cheng; Lu Junpeng; Zheng Minrui; Lim Kim Yong; Nripan Mathews; Subodh G. Mhaisalkar; Tang Sing Hai; Zhang Xinhai; Sow Chorng Haur

doi:10.1039/C2RA20973J

Improved electrical property of Sb-doped SnO₂ nanonets as measured by contact and non-contact approaches

Liu Hongwei,†^ab Sun Cheng,†^c Lu Junpeng,*^a Zheng Minrui,^a Lim Kim Yong,^a Nripan Mathews,^c Subodh G. Mhaisalkar,^c Tang Sing Hai,^a Zhang Xinhai*^b and Sow Chorng Haur*^a

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* Corresponding authors

^a Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore
E-mail: lujunpeng@nus.edu.sg, physowch@nus.edu.sg

^b Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore
E-mail: xh-zhang@imre.a-star.edu.sg

^c School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1 Nanyang Avenue, Singapore

Abstract

This work reports the characterization of antimony doping effects on the electron transportation in SnO₂ nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude–Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire–nanowire junction barriers.

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Improved electrical property of Sb-doped SnO₂ nanonets as measured by contact and non-contact approaches

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Improved electrical property of Sb-doped SnO₂ nanonets as measured by contact and non-contact approaches

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