This paper reports the synthesis, characterization and field-effect transistor (FET) properties of two new two-dimensional (2D) polymers, P1 and P2. The conjugated polymers were constructed by electron-rich main chains and D–A type side chains. DSC and XRD measurements revealed the amorphous nature of the polymer thin films and electrochemistry measurement results showed a low HOMO level of about −5.1 eV for both polymers. The polymers based solution-processed thin-film transistors with bottom-contact/bottom-gate geometry were fabricated with the films annealed at different temperatures to evaluate the FET performances. The hole mobilities were 3.6 × 10−3 and 4.0 × 10−3 cm2 V−1s−1, with current on/off ratios of 1.0 × 105 and 2.0 × 105, for P1 and P2, respectively, at an annealing temperature of 160 °C when measured under ambient conditions, which are relatively good results for amorphous polymers.
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