Issue 5, 2012
From the journal:

Nanoscale

Efficient HgTe colloidal quantum dot-sensitized near-infrared photovoltaic cells

Sang Hyuk Im,†a   Hi-jung Kim,†a   Sung Woo Kim,b   Sang-Wook Kim*b  and  Sang Il Seok*a  

* Corresponding authors

a KRICT-EPFL Global Research Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, Republic of Korea
E-mail: seoksi@krict.re.kr
Fax: +82-42-861 4151

b Department of Molecular Science and Technology, Ajou University, San 5, Wonchen-dong, Suwon, Republic of Korea
E-mail: swkim@ajou.ac.kr

Abstract

We have demonstrated the successful fabrication of multiple-layer colloidal quantum dot (CQD)-sensitized near-infrared (NIR) photovoltaic (PV) cells using the solution processable HgTe CQDs and poly-3-(hexylthiophene) (P3HT) as hole-conducting polymer. The cells showed a 3.6 fold enhancement in power conversion efficiency under NIR light illumination by the post-ethanedithiol chemical treatment. The performance enhancement was mainly ascribed to the improved interfacial contact between HgTe CQDs by elimination of oleic acid as capping ligand on the surface of HgTe CQDs. In addition, the HgTe CQD-sensitized PV cells could effectively detect weak NIR light and process over 1 kHz level signals.

Graphical abstract: Efficient HgTe colloidal quantum dot-sensitized near-infrared photovoltaic cells

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Article information

DOI
https://doi.org/10.1039/C2NR11722C
Article type
Communication
Submitted
13 Nov 2011
Accepted
22 Dec 2011
First published
04 Jan 2012

Nanoscale, 2012,4, 1581-1584

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Efficient HgTe colloidal quantum dot-sensitized near-infrared photovoltaic cells

S. H. Im, H. Kim, S. W. Kim, S. Kim and S. I. Seok, Nanoscale, 2012, 4, 1581 DOI: 10.1039/C2NR11722C

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