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Issue 8, 2011
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STM-induced surface aggregates on metals and oxidized silicon

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Abstract

We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements of the same area have been obtained.

Graphical abstract: STM-induced surface aggregates on metals and oxidized silicon

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Publication details

The article was received on 28 Apr 2011, accepted on 02 Jun 2011 and first published on 19 Jul 2011


Article type: Paper
DOI: 10.1039/C1NR10430F
Citation: Nanoscale, 2011,3, 3391-3394
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    STM-induced surface aggregates on metals and oxidized silicon

    D. Stöffler, H. v. Löhneysen and R. Hoffmann, Nanoscale, 2011, 3, 3391
    DOI: 10.1039/C1NR10430F

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