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Issue 5, 2011
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Growth of silver nanowires on GaAs wafers

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Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO3) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electrons in the semi-insulating GaAs wafers that can lead to the formation of a low-density of nuclei that facilitate their anisotropic growth into nanowires. The resulting Ag nanowires exhibit rough surfaces and reasonably good electric conductivity. These characteristics are beneficial to sensing applications based on single-nanowire surface-enhanced Raman scattering (SERS) and possible surface-adsorption-induced conductivity variation.

Graphical abstract: Growth of silver nanowires on GaAs wafers

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The article was received on 10 Feb 2011, accepted on 11 Mar 2011 and first published on 11 Apr 2011

Article type: Paper
DOI: 10.1039/C1NR10153F
Citation: Nanoscale, 2011,3, 2247-2255
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    Growth of silver nanowires on GaAs wafers

    Y. Sun, Nanoscale, 2011, 3, 2247
    DOI: 10.1039/C1NR10153F

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