Issue 4, 2011
From the journal:

Nanoscale

Nonvolatile resistive switching in single crystalline ZnO nanowires†

Yuchao Yang,‡a   Xiaoxian Zhang,‡b   Min Gao,*b   Fei Zeng,a   Weiya Zhou,c   Sishen Xie*bc  and  Feng Pan*a  

* Corresponding authors

a Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, People's Republic of China
E-mail: panf@mail.tsinghua.edu.cn
Fax: +86-10-62771160
Tel: +86-10-62772907

b Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, People's Republic of China
E-mail: mingao@pku.edu.cn
Fax: +86-10-62757555
Tel: +86-10-62762722

c Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
E-mail: ssxie@aphy.iphy.ac.cn
Fax: +86-10-82649531
Tel: +86-10-82649081

Abstract

We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories.

Graphical abstract: Nonvolatile resistive switching in single crystalline ZnO nanowires

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Supplementary files

Article information

DOI
https://doi.org/10.1039/C1NR10096C
Article type
Paper
Submitted
25 Jan 2011
Accepted
20 Feb 2011
First published
11 Mar 2011

Nanoscale, 2011,3, 1917-1921

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Nonvolatile resistive switching in single crystalline ZnO nanowires

Y. Yang, X. Zhang, M. Gao, F. Zeng, W. Zhou, S. Xie and F. Pan, Nanoscale, 2011, 3, 1917 DOI: 10.1039/C1NR10096C

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