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Issue 4, 2011
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From stochastic single atomic switch to nanoscale resistive memory device

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Abstract

We study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, somewhat larger junctions with diameters of a few nanometres display a well defined, reproducible switching behavior attributed to the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a lower size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

Graphical abstract: From stochastic single atomic switch to nanoscale resistive memory device

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Publication details

The article was received on 06 Dec 2010, accepted on 21 Feb 2011 and first published on 15 Mar 2011


Article type: Communication
DOI: 10.1039/C0NR00951B
Citation: Nanoscale, 2011,3, 1504-1507
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    From stochastic single atomic switch to nanoscale resistive memory device

    A. Geresdi, A. Halbritter, A. Gyenis, P. Makk and G. Mihály, Nanoscale, 2011, 3, 1504
    DOI: 10.1039/C0NR00951B

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