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Issue 45, 2011
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Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

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Abstract

Ag2Te simultaneously shows high mobility and low thermal conductivity, however the relatively low band gap of ∼0.2 eV prevents it from achieving high thermoelectric figure of merit, zT, in the high temperature phase. In this study, the band gap of Ag2Te has been increased enabling a zT of unity by forming alloys and composites with PbTe, thereby demonstrating the importance of exploiting potentially good thermoelectrics among these small band gap semiconductors and similar materials.

Graphical abstract: Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

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Publication details

The article was received on 10 Aug 2011, accepted on 29 Sep 2011 and first published on 17 Oct 2011


Article type: Paper
DOI: 10.1039/C1JM13888J
Citation: J. Mater. Chem., 2011,21, 18256-18260
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    Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

    Y. Pei, N. A. Heinz and G. J. Snyder, J. Mater. Chem., 2011, 21, 18256
    DOI: 10.1039/C1JM13888J

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