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Issue 32, 2011
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Enhanced polymeric lithography resists via sequential infiltration synthesis

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Abstract

Etch resistance of two commonly used lithography resists is increased significantly by sequential infiltration synthesis (SIS). Exposing films to trimethyl-aluminum and water with long dosage times infiltrates the bulk of the film with alumina, which renders them dramatically more resistant to plasma etching with no degradation to the patterns. Enhanced etch resistance eliminates the need for an intermediate hard mask and the concomitant costs and pattern fidelity losses. Moreover, by allowing for thinner resist films, this approach can improve the final pattern resolution.

Graphical abstract: Enhanced polymeric lithography resists via sequential infiltration synthesis

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Publication details

The article was received on 31 May 2011, accepted on 22 Jun 2011, published on 06 Jul 2011 and first published online on 06 Jul 2011


Article type: Communication
DOI: 10.1039/C1JM12461G
Citation: J. Mater. Chem., 2011,21, 11722-11725
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    Enhanced polymeric lithography resists via sequential infiltration synthesis

    Y. Tseng, Q. Peng, L. E. Ocola, D. A. Czaplewski, J. W. Elam and S. B. Darling, J. Mater. Chem., 2011, 21, 11722
    DOI: 10.1039/C1JM12461G

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