Issue 38, 2011

High Tc ferroelectricity in V-doped ZnO nanorods

Abstract

We report the observation of a high ferroelectric Curie temperature (Tc ∼ 345 °C) with a high remnant polarization (4.83 μC cm−2) and low coercive field (5.43 kV cm−1) in V-doped ZnO nanorods (NR) synthesized by a low cost chemical route. Raman scattering analysis confirmed the formation of a wurzite structure with a good crystal quality and less structural defects in as-grown V-doped ZnO NR. The formation of non-collinear V–O bonds and their easy rotation under an electric field induces a switchable higher spontaneous polarization. The persistence of a better ferroelectric behaviour, even at 20 nm size and high Tc, in V-doped ZnO NR opens up new possibilities for high temperature nano-piezotronics applications of ZnO NR, including energy harvesting, which is a better option than lead-based or lead-free perovskite materials.

Graphical abstract: High Tc ferroelectricity in V-doped ZnO nanorods

Article information

Article type
Paper
Submitted
12 May 2011
Accepted
05 Jul 2011
First published
11 Aug 2011

J. Mater. Chem., 2011,21, 14559-14562

High Tc ferroelectricity in V-doped ZnO nanorods

M. K. Gupta and B. Kumar, J. Mater. Chem., 2011, 21, 14559 DOI: 10.1039/C1JM12107C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements