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Issue 37, 2011
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Facile chemical rearrangement for photopatterning of POSS derivatives

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We report a useful acid-catalyzed crosslinking reaction which enables the direct photopatterning of POSS derivatives to form robust nanoporous matrices. Octakis(dimethylacetoxyethyl siloxy) POSS and octakis(dimethylacetoxypropyl siloxy) POSS were synthesized from commercially available octahydrido-POSS. Both the acetoxyethyl- and acetoxypropyl functionalities were observed to undergo thermal rearrangement at temperatures above 300 °C to form Si–O–Si bonds, thus forming a crosslinked POSS network. Interestingly, the same functionalities were also acid sensitive, and the chemical rearrangement occurred at much lower temperatures. Thus, patterned nanoporous features were lithographically generated when a photoacid generator (PAG) was used as a photosensitive agent to initiate the crosslinking of the POSS derivatives. The dielectric properties were evaluated for the crosslinked POSS films, which had a dielectric constant ∼2.3 and an elastic modulus of ∼2.0 GPa. These materials hold great promise for developing a photopatternable low-k material which eliminates the need for sacrificial layers when patterning low-k dielectric films.

Graphical abstract: Facile chemical rearrangement for photopatterning of POSS derivatives

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The article was received on 01 Mar 2011, accepted on 19 Apr 2011 and first published on 14 May 2011

Article type: Paper
DOI: 10.1039/C1JM10882D
Citation: J. Mater. Chem., 2011,21, 14254-14258
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    Facile chemical rearrangement for photopatterning of POSS derivatives

    J. Rathore, Q. Dai, B. Davis, M. Sherwood, R. D. Miller, Q. Lin and A. Nelson, J. Mater. Chem., 2011, 21, 14254
    DOI: 10.1039/C1JM10882D

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