Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor†
Abstract
A new homoleptic sublimable indium(III) guanidinate, (In[(NiPr)2CNMe2]3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%.