Issue 11, 2011
From the journal:

Physical Chemistry Chemical Physics

Insights into scanning probe high-field chemistry of diphenylgermane†

Stephanie E. Vasko,ab   Wenjun Jiang,c   Renyu Chen,d   Robert Hanlen,a   Jessica D. Torrey,a   Scott T. Dunham*acd  and  Marco Rolandi*a  

* Corresponding authors

a Department of Materials Science & Engineering, University of Washington, 302 Roberts Hall Box 352120, Seattle, WA, USA
E-mail: rolandi@u.washington.edu
Fax: 206 543 3100
Tel: 206 221 0309

b Department of Chemistry, University of Washington, Seattle, WA, USA

c Department of Physics, University of Washington, Seattle, WA, USA

d Department of Electrical Engineering, University of Washington, Seattle, WA, USA
E-mail: dunham@u.washington.edu

Abstract

Experiments and simulations are used to elucidate a new class of chemical reactions occurring near the tip–sample interface during high field chemistry of diphenylgermane. Current data during writing and bias dependent growth rate are analyzed, supplemented with data from ionization mass spectrometry, and compared with the simulation results.

Graphical abstract: Insights into scanning probe high-field chemistry of diphenylgermane

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Article information

DOI
https://doi.org/10.1039/C0CP02150D
Article type
Communication
Submitted
13 Oct 2010
Accepted
19 Jan 2011
First published
03 Feb 2011

Phys. Chem. Chem. Phys., 2011,13, 4842-4845

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Insights into scanning probe high-field chemistry of diphenylgermane

S. E. Vasko, W. Jiang, R. Chen, R. Hanlen, J. D. Torrey, S. T. Dunham and M. Rolandi, Phys. Chem. Chem. Phys., 2011, 13, 4842 DOI: 10.1039/C0CP02150D

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