Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 27, 2011
Previous Article Next Article

Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Author affiliations

Abstract

Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH3 sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.

Graphical abstract: Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 06 May 2011, accepted on 12 May 2011 and first published on 06 Jun 2011


Article type: Communication
DOI: 10.1039/C1CC12658J
Citation: Chem. Commun., 2011,47, 7761-7763
  •   Request permissions

    Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

    G. Lu, K. Yu, L. E. Ocola and J. Chen, Chem. Commun., 2011, 47, 7761
    DOI: 10.1039/C1CC12658J

Search articles by author