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Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

Corresponding authors
Department of Mechanical Engineering, University of Wisconsin–Milwaukee, Milwaukee, Wisconsin 53211, USA
Fax: +1 414 229 6958
Tel: +1 414 229 2615
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
Chem. Commun., 2011,47, 7761-7763

DOI: 10.1039/C1CC12658J
Received 06 May 2011, Accepted 12 May 2011
First published online 06 Jun 2011
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