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Issue 27, 2011
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Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

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Abstract

Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH3 sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.

Graphical abstract: Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

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Publication details

The article was received on 06 May 2011, accepted on 12 May 2011, published on 06 Jun 2011 and first published online on 06 Jun 2011


Article type: Communication
DOI: 10.1039/C1CC12658J
Citation: Chem. Commun., 2011,47, 7761-7763
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    Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors

    G. Lu, K. Yu, L. E. Ocola and J. Chen, Chem. Commun., 2011, 47, 7761
    DOI: 10.1039/C1CC12658J

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