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Issue 38, 2011
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Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

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Abstract

Adsorption of tetracyanoethylene (TCNE) onto hydrogen terminated, n-type silicon-on-insulator is shown to cause significant depletion of majority carriers. Employing an ambient pseudo-MOSFET, ppm levels of TCNE vapour rapidly decrease the n-channel saturation current by at least two orders of magnitude. Covalent passivation with a decyl monolayer improves the reversibility of the response while only slightly decreasing the sensitivity.

Graphical abstract: Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

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Publication details

The article was received on 28 Apr 2011, accepted on 23 Jul 2011 and first published on 05 Sep 2011


Article type: Communication
DOI: 10.1039/C1CC12504D
Citation: Chem. Commun., 2011,47, 10593-10595
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    Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

    G. Dubey, F. Rosei and G. P. Lopinski, Chem. Commun., 2011, 47, 10593
    DOI: 10.1039/C1CC12504D

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