Issue 6, 2010
From the journal:

Journal of Materials Chemistry

Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor†

Zhongming Wei,ab   Hongxia Xi,ab   Huanli Dong,a   Linjun Wang,a   Wei Xu,*a   Wenping Hu*a  and  Daoben Zhu*a  

* Corresponding authors

a Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
E-mail: wxu@iccas.ac.cn, zhudb@iccas.ac.cn
Fax: +86 10 62569349
Tel: +86 10 62639355

b Graduate University of the Chinese Academy of Sciences, Beijing 100039, P. R. China

Abstract

The mobilities of the solution-processed n-type organic semiconductor, N,N′-di((Z)-9-octadecene)-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-e), were dramatically improved (up to 30 times) by blending with electron donors. The reason can be assigned to the facilitated charge transport due to the increased stack-ordering and crystallinity of the spin-coated thin films after blending. This provides a new way to enhance the performance of existing organic semiconductors by intentional blending.

Graphical abstract: Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor

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Article information

DOI
https://doi.org/10.1039/B918874F
Article type
Paper
Submitted
10 Sep 2009
Accepted
14 Nov 2009
First published
21 Dec 2009

J. Mater. Chem., 2010,20, 1203-1207

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Blending induced stack-ordering and performance improvement in a solution-processed n-type organic field-effect transistor

Z. Wei, H. Xi, H. Dong, L. Wang, W. Xu, W. Hu and D. Zhu, J. Mater. Chem., 2010, 20, 1203 DOI: 10.1039/B918874F

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