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Issue 37, 2009
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Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

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Abstract

Small polaron carrier density in epitaxial, doped CeO2 thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.

Graphical abstract: Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

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Publication details

The article was received on 03 Jun 2009, accepted on 14 Jul 2009 and first published on 27 Jul 2009


Article type: Communication
DOI: 10.1039/B910903J
Citation: Phys. Chem. Chem. Phys., 2009,11, 8144-8148
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    Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

    W. C. Chueh and S. M. Haile, Phys. Chem. Chem. Phys., 2009, 11, 8144
    DOI: 10.1039/B910903J

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