Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor†
Abstract
Controlled growth of oriented GaN nanopillars and randomly distributed
* Corresponding authors
a
Ruhr-University Bochum, Organometallics and Materials Chemistry, Universitätsstr. 150, Bochum, Germany
E-mail:
roland.fischer@ruhr-uni-bochum.de
Controlled growth of oriented GaN nanopillars and randomly distributed
A. Wohlfart, A. Devi, E. Maile and R. A. Fischer, Chem. Commun., 2002, 998 DOI: 10.1039/B201858F
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