Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 1, 1996
Previous Article Next Article

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

Abstract

Gallium oxide thin films have been deposited by atomic layer epitaxy (ALE) using Ga(acac)3(acac = pentane-2,4-dionate) and either water or ozone as precursors. Films were grown on silicon (100), soda lime and Corning glass substrates. The influence of the deposition parameters (e.g. pulse duration, growth and source temperatures) on film growth were studied and by a proper choice of the parameters a self-controlled growth was demonstrated around 370°C. Spectrophotometry, X-ray diffraction (XRD), Rutherford back-scattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) were used to determine the refractive index, thickness, crystallinity and stoichiometry of the films. All the films were amorphous and highly uniform with only small thickness variations. The films deposited with water contained a considerable amount of carbon as an impurity whereas ozone as an oxidizer gave stoichiometric Ga2O3 films.

Back to tab navigation
Please wait while Download options loads

Article type: Paper
DOI: 10.1039/JM9960600027
Citation: J. Mater. Chem., 1996,6, 27-31
  •   Request permissions

    Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

    M. Nieminen, L. Niinistö and E. Rauhala, J. Mater. Chem., 1996, 6, 27
    DOI: 10.1039/JM9960600027

Search articles by author