Issue 3, 1995
From the journal:

Journal of the Chemical Society, Chemical Communications

First volatile alkylgallyl manganese complexes; structure of [(CO5)Mn]2Ga[(CH2)3NMe2]. Molecular control of the stoichiometry of Mn–Ga thin films grown by low-pressure MOCVD

Roland A. Fischer,   Alexander Miehr,   Markus M. Schulte  and  Eberhardt Herdtweck  

Abstract

The Mn–Ga complexes of the general formula {L(CO)4Mn}a[GaR3–a(Do)](L = CO, R = alkyl; Do =N-Lewis-donor) are obtained in yields [gt-or-equal]90% and used as volatile single source precursors for the gas-phase deposition of thin Mn–Ga alloy films.

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Article information

DOI
https://doi.org/10.1039/C39950000337
Article type
Paper

J. Chem. Soc., Chem. Commun., 1995, 337-338

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First volatile alkylgallyl manganese complexes; structure of [(CO5)Mn]2Ga[(CH2)3NMe2]. Molecular control of the stoichiometry of Mn–Ga thin films grown by low-pressure MOCVD

R. A. Fischer, A. Miehr, M. M. Schulte and E. Herdtweck, J. Chem. Soc., Chem. Commun., 1995, 337 DOI: 10.1039/C39950000337

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