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Correction: Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3

Turgut Yilmaz *ab, William Hines a, Shoroog Alraddadi c, Joseph I. Budnick a and Boris Sinkovic a
aDepartment of Physics, University of Connecticut, Storrs, Connecticut 06269, USA. E-mail: yilmaz@phys.uconn.edu
bDepartment of Physics, Science and Literature Faculty, Uludag University, Bursa 16059, Turkey. E-mail: turgutyilmaz@uludag.edu.tr
cDepartment of Physics, Umm Al-Qura University, Makkah 24382, Kingdom of Saudi Arabia

Received 23rd March 2018 , Accepted 23rd March 2018

First published on 5th April 2018


Correction for ‘Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3’ by Turgut Yilmaz et al., Phys. Chem. Chem. Phys., 2018, DOI: 10.1039/c7cp08049b.


The authors would like to make the following corrections to their published article:

(1) On page 8627, left column, sentence beginning “For further confirmation…”, the formula Bi1.84Cr0.16Se3 should be replaced with Bi1.78Cr0.22Se3 so that the amended sentence reads “For further confirmation, we simulate the electron doping effect by growing extra Cr metal on the surface of Bi1.78Cr0.22Se3 (Fig. 6).”

(2) In Fig. 4, Bi2Se3 should be replaced with Bi1.84Cr0.16Se3 as shown in the amended figure below:


image file: c8cp90075b-f1.tif
Fig. 4 X-ray diffraction patterns obtained RT (red) and 100 K (blue) for Bi1.84Cr0.16Se3 films grown on Al2O3(0001) substrates. Data were collected with Cu Kα radiation (λ = 1.5418 Å). Dashed lines are for guiding the eyes.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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