Dong-Jin
Yun
a,
Seyun
Kim
b,
Changhoon
Jung
a,
Chang-Seok
Lee
a,
Hiesang
Sohn
c,
Jung Yeon
Won
a,
Yong Su
Kim
a,
JaeGwan
Chung
a,
Sung
Heo
a,
Seong Heon
Kim
a,
Minsu
Seol
*d and
Weon Ho
Shin
*e
aAnalytical Science Laboratory, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
bMaterials Research Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
cDepartment of Chemical Engineering, Kwangwoon University, 20 Kwangwoon-Ro, Nowon-Gu, Seoul 01897, Republic of Korea
dGraphene Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea. E-mail: Minsu.seol@samsung.com
eEnergy Materials Center, Energy & Environment Division, Korea Institute of Ceramic Engineering & Technology, 101 Soho-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea. E-mail: whshin@kicet.re.kr
First published on 5th January 2018
Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.
This work was supported by a grant from the Fundamental R&D program for Core Technology of Materials funded by the National Research Foundation (NRF) of Korea (NRF-2017R1D1A1B03034322). This work was supported by the Samsung Advanced Institute of Technology.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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