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Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering

Dong-Jin Yun a, Seyun Kim b, Changhoon Jung a, Chang-Seok Lee a, Hiesang Sohn c, Jung Yeon Won a, Yong Su Kim a, JaeGwan Chung a, Sung Heo a, Seong Heon Kim a, Minsu Seol *d and Weon Ho Shin *e
aAnalytical Science Laboratory, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
bMaterials Research Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
cDepartment of Chemical Engineering, Kwangwoon University, 20 Kwangwoon-Ro, Nowon-Gu, Seoul 01897, Republic of Korea
dGraphene Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea. E-mail: Minsu.seol@samsung.com
eEnergy Materials Center, Energy & Environment Division, Korea Institute of Ceramic Engineering & Technology, 101 Soho-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea. E-mail: whshin@kicet.re.kr

Received 20th December 2017 , Accepted 20th December 2017

First published on 5th January 2018


Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.


The authors would like to correct the grant number given in the Acknowledgements of the published article. The correct Acknowledgements should read as follows:

This work was supported by a grant from the Fundamental R&D program for Core Technology of Materials funded by the National Research Foundation (NRF) of Korea (NRF-2017R1D1A1B03034322). This work was supported by the Samsung Advanced Institute of Technology.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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