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DOI: 10.1039/C6CP90163H
(Correction)
Phys. Chem. Chem. Phys., 2017, Advance Article

Jian
Zhang
^{ab},
Dawen
Zeng
*^{ab},
Qiang
Zhu
^{a},
Jinjin
Wu
^{c},
Qingwu
Huang
^{c},
Wan
Zhang
^{a} and
Changsheng
Xie
^{a}
^{a}State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China. E-mail: dwzeng@mail.hust.edu.cn; Tel: +86-027-87559835
^{b}Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062, China
^{c}Analytical and Testing Centre, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China

Received
21st June 2016
, Accepted 21st June 2016

First published on the web 29th June 2016

Correction for ‘Enhanced room temperature NO_{2} response of NiO–SnO_{2} nanocomposites induced by interface bonds at the p–n heterojunction’ by Jian Zhang et al., Phys. Chem. Chem. Phys., 2016, 18, 5386–5396.

The authors wish to revise several paragraphs of their article, beginning on page 5393, left column, line 31 in order to correct an error with an equation used and the subsequent discussion in the text. The amended section is provided below:

To further elaborate the sensing mechanism of the heterojunction, the surface band bending diagrams, involving the interface potential, are employed, as shown in Fig. 10. Commonly, the conductance of materials is dependent on carrier density and mobility, therefore, the conductance of NiO can be expressed as:^{48}

σ = qpμ | (2) |

(3) |

For a p-type semiconductor, the conduction process is mainly dominated by the surface hole accumulation layer component. And the hole density in the surface accumulation layer can be expressed as:^{50}

(4) |

(5) |

(6) |

As the carrier mobility is dependent on the interface potential, the carrier mobility can be expressed as:^{49}

(7) |

(8) |

Additionally, the carrier concentration of heterojunction nanocomposites is determined by the interface potential, and the carrier concentration of the nanocomposites can be expressed as:

(9) |

(10) |

Comparing eqn (5) with eqn (10), the sensitivity of the NiO–SnO_{2} heterojunction is characterized by two factors, involving the changes both in the carrier density and in the carrier mobility induced by NO_{2} adsorption, while the sensitivity of the bare NiO is only dependent on the changes in the surface band bending, as shown in Fig. 10. For the nanocomposites, the higher electron concentration in the SnO_{2} could attract NO_{2} gas more easily, and then more NO_{2} molecules adsorbed on the NiO–SnO_{2} nanocomposites, leading to the largely decreased interface potential of the heterojunction nanocomposites, as shown in Fig. 10. Therefore, the variation of the interface potential of nanocomposites induced by NO_{2} adsorption is larger than the changes in the surface band bending of bare NiO, leading to a more obvious decrease of the interface potential and a drastic effect on the transducer function for gas sensing. This means that NO_{2} adsorption affects the heterojunction conductance doubly, first through the carrier density term and second through the mobility term, enhancing the transducer function up to the square of that of the bare NiO. Therefore, the response of heterostructured NiO–SnO_{2} nanocomposites is largely enhanced at room temperature compared to the bare NiO.

Fig. 10 The schematics and band diagrams of the bare NiO (a) and the NiO–SnO_{2} heterojunction (b). |

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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