Xing
Huang
ab,
Yong-Qiang
Yu
c,
Jing
Xia
a,
Hua
Fan
a,
Lei
Wang
a,
Marc-Georg
Willinger
*b,
Xiao-Ping
Yang
a,
Yang
Jiang
c,
Tie-Rui
Zhang
a and
Xiang-Min
Meng
*a
aKey Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. E-mail: mengxiangmin@mail.ipc.ac.cn
bDepartment of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin, Germany. E-mail: willinger@fhi-berlin.mpg.de
cSchool of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, P. R. China
First published on 12th February 2015
Semiconducting heterostructures with type-II band structure have attracted much attention due to their novel physical properties and wide applications in optoelectronics. Herein, we report, for the first time, a controlled synthesis of type-II ZnS/SnO2 heterostructured ribbon composed of SnO2 nanoparticles that uniformly cover the surface of ZnS ribbon via a simple and versatile thermal evaporation approach. Structural analysis indicated that the majority of SnO2 nanoparticles have an equivalent zone axis, i.e., <−313> of rutile SnO2, which is perpendicular to ±(2−1−10) facets (top/down surfaces) of ZnS ribbon. For those SnO2 nanoparticles decorated on ±(01−10) facets (side surfaces) of ZnS ribbon, an epitaxial relationship of (01−10)ZnO//(020)SnO2 and [2−1−10]ZnO//[001]SnO2 was identified. To explore their electronic and optoelectronic properties, we constructed field-effect transistors from as-prepared new heterostructures, which exhibited an n-type characteristic with an on/off ratio of ∼103 and a fast carrier mobility of ∼33.2 cm2 V−1 s−1. Owing to the spatial separation of photogenerated electron–hole pairs from type-II band alignment together with the good contacts between electrodes and ribbon, the resultant photodetector showed excellent photoresponse properties, including large photocurrent, high sensitivity (external quantum efficiency as high as ∼2.4 × 107%), good stability and reproducibility, and relatively fast response speed. Our results suggest great potential of ZnS/SnO2 heterostructures for efficient UV light sensing, and, more importantly, signify the advantages of type-II semiconducting heterostructures for construction of high-performance nano-photodetectors.
ZnS and SnO2, with direct band-gaps of 3.77 eV and 3.6 eV respectively at room temperature, are important semiconductors and have been intensively investigated for a variety of electronic and optoelectronic applications.25–35 With many efforts devoted in the past decade, significant progress has been made in their controlled synthesis and performance optimization for optoelectronic devices. However, due to their intrinsic physical and chemical characteristics, optoelectronic devices from those semiconductors often exhibit inherent problems in their use. For example, it has been demonstrated that individual ZnS nanostructure-based photodetectors generally suffer from low photocurrent and poor stability.14,25,36 For photodetectors from SnO2 nanostructures, their response speed and photocurrent stability are often unsatisfactory because of some natural defects, such as oxygen vacancies in the surface.29,33,36 Alternatively, it is also worth mentioning that intrinsic ZnS-based photodetectors often show fast response speeds,25 while photodetectors constructed from SnO2 typically present large photocurrents, high sensitivity and good contact with electrodes.37 One may expect that through combination of ZnS and SnO2, the formed ZnS/SnO2 heterostructure may integrate advantages from both individual components and exhibit optimized properties, such as large photocurrent, high stability and sensitivity, and relatively fast response speed. Additionally, it is known that ZnS/SnO2 heterostructure has a type-II band alignment, in which both the conduction and the valence bands of the SnO2 are lower in energy than those of the ZnS. The type-II band configuration of heterostructures has been demonstrated to be able to increase the lifetime of photogenerated electrons and holes efficiently by forming a charge separation state.38,39 This feature could also be helpful for improving optoelectronic performance of the ZnS/SnO2 heterostructure regarding its photocurrent, photosensitivity and so forth.
In this contribution, we show for the first time a rational design of type-II ZnS/SnO2 core/shell ribbons via a simple two-step thermal evaporation method. The morphology, structure and composition of samples were systematically characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometry (EDX), respectively. We show the first optoelectronic study of a photodetector assembled with the synthesized new ZnS/SnO2 core/shell heterostructured ribbon. The device showed good optoelectronic performances, including large photocurrent, high photosensitivity, good stability, and so forth. Our result indicates that the ZnS/SnO2 heterostructures could be of use for efficient UV-light sensing.
Next, with our goal of achieving ZnS/SnO2 core/shell heterojunctions, deposition of SnO2 nanoparticles was carried out by using the ZnS ribbons as template and SnO powder as source material through a thermal disproportionation reaction (eqn (3)). It is worth mentioning that a temperature of 600 °C was set in the deposition area to avoid the deposition of Sn on the ZnS ribbons, and at the same time to achieve highly crystallized SnO2 nanoparticles. Detailed procedures can be found in the Experimental section. Fig. 1a–c show representative SEM images of the final product at different magnifications, corresponding one-to-one with Fig. S1a–c† (SEM images of ZnS ribbons), respectively. It seems that no obvious change occurred according to the low-magnification SEM observations: the morphology of the product is retained afterwards and still exhibits a well-defined ribbon structure. However, the high-magnification SEM image shown in Fig. 1d clearly reveals that the surface of ribbon became significantly rougher in comparison to that of primary ZnS ribbon (Fig. 1e), suggesting a possibility that SnO2 is coated on the ZnS ribbon. EDX analysis was also performed on the sample. As shown in Fig. S2,† the presence of Sn and O elements in the final product solidly demonstrates the successful deposition of SnO2 on ZnS ribbon. In order to investigate the phase structure of SnO2 nanoparticles, XRD measurement was carried out. Fig. 1f shows the XRD pattern of the as-synthesized ZnS/SnO2 heterojunction ribbons, in which a biphase mixture of ZnS and SnO2 was identifiable. In addition to those reflection peaks from the wurtzite ZnS40 (JCPDS, no. 36-1450), the relatively weak peaks located at about 34° and 38° can be indexed to the (101) and (200) planes of rutile SnO241 with lattice constants of a = 0.47 nm and c = 0.32 nm (JCPDS, no. 41-1445). Interestingly, it is also found that the intensity ratio between (101) and (200) reflections in the current study is much higher compared with that calculated from the standard XRD spectrum of polycrystalline SnO2, indicating that there exists preferred crystallographic orientation for SnO2 nanoparticles on ZnS ribbons.
(1) |
Zn + H2S → ZnS + H2 | (2) |
(3) |
To further verify the composition of the heterostructures, an elemental analysis was also carried out with EDX in scanning TEM (STEM) mode. Fig. 2a shows a plan-view high-angle annular dark field STEM (HAADF-STEM) image of a ribbon after the coating process. It can be seen that the surface of the ribbon is a little rugged, which is in good accordance with the SEM observation. The elemental mapping of the ribbon indicates that the rugged layer is SnO2, which covers the surface of the ZnS ribbon. To give more insight into the constitution and chemical composition of heterostructures, cross-sections of ribbons were also prepared and, correspondingly, the EDX mapping was done as well. Fig. 2c is an HAADF image of the cross-section. It is known that in HAADF imaging mode, the intensity of the image scales with the square of atomic number Z. With a larger atomic number, SnO2 would be brighter than ZnS in the image. In this regard, we can assign the outside layers with a relatively brighter contrast to the SnO2, and the inner part to the ZnS. This is confirmed further by the relevant elemental mapping. As shown in Fig. 2d, the Zn and S elements distribute only in the center of the “sandwich” while Sn and O elements are detected exclusively in the two outer layers.
Fig. 2 (a, b) Plan-view and (c, d) cross-sectional view HAADF-STEM images and corresponding EDX elemental mapping of the ZnS/SnO2 core/shell ribbons. Scale bar = 100 nm. |
In order to investigate the structure of the ZnS/SnO2 core/shell ribbon, TEM and SAED characterizations were carried out. Fig. 3a shows a low-magnification TEM image of the resultant heterostructure. It can be observed that SnO2 nanoparticles, with typical diameters of about 15–35 nm, are homogenously and compactly covering the surface of the ZnS ribbon. The corresponding SAED pattern (Fig. 3b) reveals a superposition of two different sets of diffraction spots. One set represents well-orientated spots that can be assigned to [2−1−10] zone axis of wurtzite ZnS and the other set, with diffraction pattern composed of rings, can be assigned to rutile SnO2. It is noteworthy that the intensities of (101) diffraction spots of SnO2 are significantly enhanced, which indicates that the majority of SnO2 nanoparticles have preferred orientations on the ZnS ribbon. This can be confirmed nicely by HAADF-STEM imaging of core/shell ribbon, as shown in Fig. S3a and b.† Interestingly, those particles have an equivalent zone axis after analysis, i.e., <−313> of rutile SnO2 (Fig. S3c–e).†Fig. 3c shows an HRTEM image of the ZnS/SnO2 heterostructured ribbon, in which the lattice fringes of the wurtzite ZnS (0001) and rutile SnO2 (101), with d-spacings of 0.63 nm and 0.26 nm, are revealed. The angle between the (101) planes of two SnO2 particles is measured as 86°, well consistent with that of (101) electron diffractions of SnO2, as indicated in Fig. 3b. Fig. 3d is a constructed inverse fast Fourier transform (IFFT) image extracted from the image of Fig. 3c. It is very clear now that the two SnO2 particle domains, orientated with their (101) planes with an angle of 86°, are located on the (2−1−10) facet of the ZnS ribbon. Fig. 3a shows a low-magnification TEM image of heterostructured ribbon with a low coating density of SnO2. As observed, only a few SnO2 nanoparticles are found to be decorated on the side facets of the ribbon. The low coating density enables us to directly resolve the fine structure of hetero-interface. Fig. 3f and Fig. S4a–d† show representative HRTEM images taken from the interfacial region between SnO2 nanoparticles and side facets of ZnS ribbon. It is interesting to note that the two components exhibit exactly the same orientation relationship in all cases, which is given by (01–10)ZnO//(020)SnO2 and [2–1–10]ZnO//[001]SnO2. Fig. 3g is a cross-sectional image of sandwiched ribbon. As demonstrated already by EDX mapping, the central part is ZnS and the shells are SnO2. Their thicknesses are measured to be ∼80 nm and ∼20 nm, respectively. Fig. 3h is the corresponding SAED pattern of the “sandwich”, in which a superposition composed of two different sets of diffraction spots was identifiable. The hexagonally arranged spots are from the [0001] zone axis of wurtzite ZnS while the other set of sporadic spots can be assigned to rutile SnO2, as indicated in the image. HRTEM image of the ZnS/SnO2 cross section and relevant reconstructed image are displayed in Fig. S5 in the ESI.†
Fig. 4c shows source-drain current (Ids) as a function of source-drain voltage (Vds) recorded at diverse gate voltages (Vg). It is seen that the current increases with the change of gate voltage from −40 V to +40 V, presenting a typical n-type semiconductor characteristic. The Ids reaches ∼11 μA at a Vg of +40 V, and is turned off when Vg is lower than −40 V. Fig. 4d shows the Idsversus Vg plot of the device measured at a Vds of 5 V. It is noteworthy that the device can give a large ION/IOFF ratio of over 103, suggesting a good modulation ability of the gate voltage to the channel conduction. According to the relationship of gm = dIds/dVg, the transconductance (gm) of the FET is deduced to be ∼265 nS in the linear regime of the Ids–Vg curve. This value was employed to calculate the carrier mobility μn and concentration ne according to the following equations:
gm = dIds/dVg = ZμnC0Vds/L | (4) |
ne = σ/qμn | (5) |
Optoelectronic properties of the ZnS/SnO2 core/shell heterostructure were also investigated. Fig. 5a shows the current–voltage (I–V) curves of an individual ZnS/SnO2 core/shell ribbon under monochromatic light of different wavelengths. It is evident that the current of the device depends strongly on the wavelength of light. When the device was illuminated with 320 nm UV light at 0.1 mW cm−2, the current across the device can reach 17.4 μA at an applied voltage of 5 V. However, illumination of 550 nm light on the device only gives a low current of 3.6 μA (almost the dark current level, 3.5 μA), indicating a visible-blind characteristic. It is also noted that the I–V curves are symmetrical about the origin and exhibit linearly dependent characteristic, indicating a good Ohmic contact between the ribbon and the ITO electrodes.16Fig. 5b shows the spectroscopic photoresponse of the device as a function of the incident light wavelength at a bias voltage of 1 V. The cut-off wavelength of the device is shown to be ∼370 nm and light with energy below this threshold wavelength is insufficient to generate electron–hole pairs in the ribbon. When the device was illuminated by light with energy above this threshold wavelength, the photoresponse exhibited a significant increase by about four to six orders of magnitude, demonstrating that our device is suitable as a visible-blind UV photodetector. The increase step at an excitation energy range from 3.35 eV to 3.87 eV (corresponding to 320–370 nm wavelength range) is close to the bandgap energies of SnO2 (3.6 eV) and ZnS (3.77 eV), respectively. Fig. 5c depicts a time-dependent response of the device by switching light illumination (320 nm, ∼0.1 mW cm−2) on and off periodically at a fixed voltage of 1.0 V. The device shows a good stability and reproducibility: upon UV illumination, the photocurrent increased to a stable value of ∼3.2 μA, and then dropped down to the initial value of ∼0.4 μA when the light was turned off, with a photocurrent to dark current ratio (Ilight/Idark) of ∼8. This ratio can be increased with an elevated light intensity. The photoconductive mechanism in the ZnS/SnO2 core/shell ribbon can be understood by processes of adsorption and desorption of oxygen molecules on the ribbon, similar to those reported previously in other semiconductors.17,42 In ambient conduction, the oxygen molecules are adsorbed on the surface of the ribbon and trap the free electrons in the form of [O2 + e− → O2−], creating a low-conductivity depletion layer near the surface. When the device is illuminated with UV light, electron–hole pairs are generated as a consequence, which would migrate to the surface of the ribbon and desorb the oxygen via the reaction [O2− + h+ → O2]. This process decreases the thickness of the depletion layer and increases the concentration of free carriers, leading to a significantly enhanced photocurrent as a consequence.
In addition to stability and reproducibility, the response speed is also an important parameter to evaluate the performance of a photodetector. The time accounting for the photocurrent increasing from 10% to 90% of peak value or vice versa is defined as the rise time and decay time, respectively. According to the photoresponse of the device shown in Fig. 5d, the rise time and decay time are determined to be ∼8 s and ∼61 s, respectively. Although the values are not as good as those for devices made of intrinsic ZnS nanoribbons, they are better than those for photodetectors fabricated with n-doped ZnS nanostructures, such as ZnS:Al and ZnS:Cl nanowires.43,44 It is also worth mentioning that our device shows the ability to work under pulsed UV irradiation. Fig. 6a and b present photoresponse of the device at a chopper frequency of 10 Hz and 150 Hz, respectively. The distinct on/off state indicates that the device can well follow pulsed UV irradiation with various chopper frequencies. Fig. 6c plots the relative balance (Imax − Imin)/Imax as a function of switching frequency of the device. Although the relative balance value decrease gradually with an increase of frequency, the device still retains a relative balance of about 45% at a high frequency of f = 200 Hz, suggesting a promising potential of the device to monitor ultrafast UV light signals.
The spectral responsivity (R) defined as the photocurrent generated per unit power of incident light on the effective area of a photoconductor and the external quantum efficiency (EQE) related to the number of electron–hole pairs excited by one absorbed photon are key parameters to determine the sensitivity of a photodetector.16 Based on eqn (6) and (7), R and EQE values of the device are calculated to be ∼6.2 × 104 A W−1 and ∼2.4 × 107%, respectively, at Vds = +1 V, where Ip is the photocurrent, Popt is the incident light intensity, S is the effective illuminated area, h is Planck's constant, c is the velocity of light, q is the electronic charge, and λ is the incident light wavelength. Such high R and EQE values demonstrate an excellent photosensitivity of the ZnS/SnO2 heterojunction-based photodetector.
(6) |
(7) |
We propose that the high photocurrent and photosensitivity in the present device may relate to the prolonged photocarrier lifetime by spatial separation of the photogenerated electron–hole pairs, considered to be attributed to the type-II band alignment of the ZnS and SnO2. Owing to the formation of an internal field at the ZnS/SnO2 heterointerface, the photogenerated electrons will move to the SnO2 side with concomitant transfer of photogenerated holes to the ZnS side, forming a spatial charge separation state within the core/shell ribbon (Fig. S6†). This charge separation state can effectively decrease the recombination of the electron–hole pairs,8,39,45,46 and thus can markedly increase the photocurrent and the external quantum efficiency of the device. Similar phenomenon has been observed in the case of a ZnO/ZnS biaxial nanoribbon-based photodetector.16 Besides, high crystallinity and relatively fast carrier mobility, as well as good Ohmic contact between ZnS/SnO2 core/shell ribbon and ITO electrodes are also considered to be beneficial for obtaining a high photocurrent. Summarized in Table 1 are the main characteristic parameters of the ZnS/SnO2 heterostructured ribbon-based photodetector in the present study, and photodetectors made of ZnS nanoribbons and SnO2 nanowires from previous reports, for comparison. One can see that the current ZnS/SnO2-based photodetector exhibits advantages of fast electron mobility, large photocurrent, high EQE and relatively fast response time, which in general go beyond those of most other devices for optoelectronic applications. Especially when comparing the photodetector from doped ZnS nanowires, our device not only shows comparable photocurrent and EQE values, but also shows much faster carrier mobility and response speed. Moreover, it is also worth mentioning that unlike the synthesis of doped ZnS that generally involves complex and uncontrollable doping process, fabrication of ZnS/SnO2 heterostructures herein is straightforward and controllable. To sum up, our results demonstrate that the as-prepared type-II ZnS/SnO2 core/shell heterostructure could be used for effective UV light sensing, and more importantly, has the advantages of type-II semiconducting heterostructures for construction of high-performance nano-photodetectors.
Photoconductors | Mobility (cm2 V−1 s−1) | Dark current | Photocurrent | EQE/gain (%) | Response time (τr, τf) | Reference |
---|---|---|---|---|---|---|
ZnS nanoribbons | — | <1 pA (5 V) | 1 pA (5 V) | 50 | <0.3 s, <0.3 s | 25 |
SnO2 nanowires | — | 40 nA (0.1 V) | 200 nA (0.1 V) | 8 × 105 | —, >100 s | 29 |
ZnS:Al nanowires | 0.16 | <0.2 μA (5 V) | <1.5 μA (5 V) | 4.3 × 108 | 95 s, 209 s | 44 |
ZnS/SnO2 core/shell ribbon | 33.2 | 0.4 μA (1 V) | 3.2 μA (1 V) | 2.4 × 107 | 8 s, 61 s | This work |
Footnote |
† Electronic supplementary information (ESI) available: SEM and TEM images of ZnS ribbons; EDX spectra of ZnS and ZnS/SnO2 core/shell ribbon; HAADF-STEM image of ZnS/SnO2 core/shell ribbon; Analysis of SAED pattern of ZnS/SnO2 core/shell ribbon; HRTEM images of hetero-interface between ZnS and SnO2 and relax atomic mode; HRTEM and relevant reconstructed IFFI-RGB images of the cross section ribbon; Schematic of the band alignment of ZnS/SnO2 core/shell ribbon. Scheme S1. Schematic illustration of (a) the experimental setup and (b) the formation process of the ZnS/SnO2 core/shell ribbon. See DOI: 10.1039/c5nr00150a |
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