Nico
Seidler
a,
Giovanni Mattia
Lazzerini
a,
Giovanni
Li Destri
b,
Giovanni
Marletta
b and
Franco
Cacialli
*a
aDepartment of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, UK. E-mail: f.cacialli@ucl.ac.uk
bLaboratory for Molecular Surfaces and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania, Viale A. Doria 6, 95125 Catania, Italy
First published on 9th October 2013
We report the preparation of films of poly(3-hexylthiophene) nanofibers suitable for fabrication of efficient multilayer solar cells by successive deposition of donor and acceptor layers from the same solvent. The nanofibers are obtained by addition of di-tert-butyl peroxide (DTBP) to a solution of P3HT in chlorobenzene. Interestingly, by varying the concentration of DTBP we are able to control both crystallinity and film retention of the spin-cast films. We also investigate the influence of the DTBP-induced crystallization on charge transport by thin-film transistor measurements, and find a more than five-fold increase in the hole mobility of nanofiber films compared to pure P3HT. We attribute this effect to the synergistic effects of increased crystallinity of the fibers and the formation of micrometer-sized fiber networks. We further demonstrate how it is possible to make use of the high film retention to fabricate photovoltaic devices by subsequent deposition of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) from a chlorobenzene solution on top of the nanofiber film. The presence of a relatively large crystalline phase strongly affects the diffusion behavior of PCBM into the P3HT film, resulting in a morphology which is different from that of common bulk heterojunction solar cells and resembles a bilayer structure, as can be inferred from comparison of the external quantum efficiency spectra. However, a high power conversion efficiency of 2.3% suggests that there is still a significant intermixing of the two materials taking place.
It has been found that thin-films of regioregular P3HT deposited from solution consist of a semi-crystalline fraction of highly ordered π–π stacks with a typical stacking distance of 3.8 Å, and a less ordered, amorphous fraction.7,8 Several factors are known to influence this aggregation behavior, including the choice of solvent and the film preparation method, as well as macromolecular properties of P3HT, such as molecular weight, regioregularity, and polydispersity.9–14
Ihn and coworkers first described that poly(3-alkylthiophenes) can form macroscopic structures in the shape of long whiskers of the length of several micrometers.15 Their method of slowly cooling a solution of P3HT in a poor solvent has been further investigated by other groups,16,17 and similar methods were developed involving non-solvents as additives,18–21 and the exposure to ultrasound.22,23
One possibility to achieve a controllable fabrication process and to add a degree of freedom in the complexity of device structures is the sequential deposition of multiple layers by insolubilization of the previous layers by cross-linking.24–28 Just few reports exist so far on the cross-linking of P3HT in order to obtain insoluble layers of P3HT that can be used to gain better control over the morphology in solution processed donor–acceptor solar cells.29
Gearba and coworkers reported on thermally cross-linked P3HT by the use of di-tert-butyl peroxide (DTBP), in analogy to a process commonly used in rubber industry to cross-link polyethylene.30–32 By adding DTBP directly to a solution of P3HT in chlorobenzene, and by annealing the films spin-cast from this solution, they observed the films to become insoluble with increasing peroxide concentration. They show a higher crystallinity of the film and a higher conductivity as well as a slight blue-shift of the absorption spectrum, and concluded in favor of a cross-linking process instead of a self-assembly of the P3HT chains, albeit without the support of a surface morphology study.
In this work, we show that it is possible to control the crystallinity and retention of thin-films of P3HT by using DTBP as an additive, even when processing at room temperature. We demonstrate how the nanoscopic and macroscopic morphology is influenced by the amount of peroxide added to the solution and we correlate this to the performance of both thin-film transistors (TFT) and solar cells. Using UV-vis absorption measurements and grazing-incidence X-ray diffraction (GIXD), we prove an increase in crystallinity upon addition of DTBP to a solution of P3HT in chlorobenzene. Interestingly, X-ray photoelectron spectroscopy (XPS) shows that the addition of the peroxide does not result in detectable oxidation of the polymer. Atomic force microscopy (AFM) images reveal the formation of P3HT fibers up to a length of several micrometers. In addition, we investigate the influence of the peroxide addition on the charge transport properties by thin-film transistor measurements, and find a progressive increase in the field-effect mobility with increasing DTBP concentration. We are able to control the retention of the films by adjusting the amount of DTBP added to the solution and make use of this to fabricate efficient solar cells by successively depositing the donor and acceptor layer from the same solvent, using PCBM as an electron acceptor. Such cells feature a power conversion efficiency of 2.3%. Since these cells have not been optimized in terms of layer thickness and other processing parameters, we consider there are good prospects for improvement.
Grazing incidence X-ray diffraction measurements were performed with a Rigaku Ultima IV type III diffractometer (Rigaku, Tokyo, Japan) equipped with cross beam optics (CBO) by using a Kα wavelength emitted by a Cu anode. Careful alignment of source and detector with respect to the sample was reached by using a thin-film attachment with three degrees of freedom. In order to avoid beam defocusing, the measurements were carried out in parallel beam mode. Divergence of the primary beam was reduced by a 5° Soller slit, while divergence of the diffracted beam was reduced by a 0.5° horizontal Soller slit. The incident angle was kept at 0.5° to avoid any significant scattering from the substrates.
XPS measurements were performed with a ESCALAB IIB spectrometer (VG Scientific Ltd., UK), using the Al Kα line at 1486.6 eV. Pass energy for wide scans was 50 eV and 20 eV for high resolution scans. All the B.E. values are referenced to the aromatic C 1s band at 284.6 eV. Integration of the XPS bands was carried out using the CasaXPS software.
For the characterization of the solar cell devices, the samples were mounted in the glove box to an airtight sample holder and all measurements were performed under medium vacuum conditions. The current–voltage characteristics of the devices were measured using a Keithley source-measure-unit remotely controlled by a computer, and a Sun 3000 Class AAA (Abet Technologies) solar simulator for illumination of the samples. The external quantum efficiency was determined using a setup consisting of a monochromator and a Xenon arc lamp as light source. The wavelength dependent light intensity was monitored by a photodiode to allow the correction of the short-circuit photocurrent after measurement.
For mobility measurements bottom-gate/bottom-contact transistors with the P3HT film as active layer were fabricated. We started from n-doped silicon substrates with a 230 nm SiO2 layer, patterned with interdigitated ITO (10 nm)/Au (30 nm) source and drain contacts (channel length, L = 20 μm and channel width, Z = 10 mm, purchased from Fraunhofer Institute IPMS, Dresden, Germany) with an oxygen plasma treatment to increase the Au workfunction. A hexamethyldisilazane (HMDS) layer was spin-coated on the samples, annealed at 100 °C for 1 h and spin-washed with isopropyl alcohol. The transfer characteristics were measured using a Karl Suss PM5 probe station and a HP4145 parameter analyzer, which was connected to low-noise guarded probes for the source- and drain-contacts and to the probe chuck for the gate connection. For these measurements, the drain-current (IDS) was measured sweeping the gate voltage (VGS) from 20 V to −60 V with a −1 V step and keeping the drain voltage (VDS) constant at −80 V. The HMDS/active-layer deposition and electrical characterization of the TFTs was carried out inside a N2 glove box.
Fig. 1 Macroscopic surface profiles of P3HT films spin-cast from solutions with different DTBP concentration (a)–(e) and associated absorption spectra (f)–(j) of these films before (straight line) and after (dashed line) spin-rinsing with chlorobenzene. Rq is the calculated root mean square roughness of the surface. The film retention factor r is the ratio of the integrated area under the as-cast film and the spin-rinsed film. |
More information about the microscopic morphology of the films is obtained with the help of AFM. Fig. 2(a) shows an AFM image of a film spin-cast from a 10 mg ml−1 solution of P3HT in chlorobenzene and 14 vol% of DTBP. It shows that the film consists of a network of interwoven fibers, with calculated surface roughness of Rq = 2.04 nm (compared to 1.04 nm for a pristine P3HT film prepared under the same conditions, image in ESI†). The single fibers appear to be several micrometers long, but the thickness is not well defined. Besides some “needle-like” features, the main part of the surface appears rather grainy, most probably as a result of non-aggregated polymer chains, which shroud the fibers and hide their actual dimensions. To disentangle the fibers and measure them independently, the solution of preformed fibers was then diluted further to a concentration of 0.005 mg ml−1 in chlorobenzene and spin-cast on a silicon dioxide (SiO2) substrate. In this way it is possible to separate the components of the fiber solution, although it is likely that the formed aggregates get partially redissolved in chlorobenzene. Nevertheless, according to the evolution of UV-vis absorption spectra of the diluted solution monitored over up to 30 min after solution preparation, we found the solution to be essentially stable with just small changes in the high wavelength end of the spectra (see ESI†). We therefore assume that smaller aggregates actually get redissolved, while larger fibers remain mostly unchanged. The AFM image in Fig. 2(b) shows particles of different size, from small dots (∼50 nm), to fibers of a length exceeding 2 μm. The measured width and height are similar for all components, being ∼40 nm and ∼5 nm, respectively, but we have not deconvoluted the images to account for the size and shape of the AFM tip, so the real width is expected to be somewhat smaller. Therefore, the values obtained in the present study are in good agreement with the findings of other groups that used AFM. In addition, using transmission electron microscopy, other groups reported a typical width of around 15–20 nm for P3HT fibers.21,33
Fig. 2 (a) AFM images of a film spin-cast on a fused silica substrate from a solution of 10 mg ml−1 P3HT in chlorobenzene with a 14 vol% content of DTBP. The height-scale is 17 nm. (b) AFM image of P3HT nanofibers on a SiO2 substrate, spin-cast after further diluting the solution used in (a) to 5 × 10−3 mg ml−1 P3HT in chlorobenzene. The height-scale is 6 nm. |
Comparison of the spectra in Fig. 1(f)–(j) shows that the shape of the absorption of the as-cast films changes considerably with varying peroxide concentration. The spectrum for cDTBP = 3 vol% shows one broad absorption peak centered at around 530 nm with a shoulder at 605 nm. For cDTBP ≥ 9 vol%, the spectrum shows a more pronounced vibrational structure, with transition peaks clearly visible at 520 nm, 555 nm, and 605 nm. The absorption peaks at highest wavelength correspond to the 0–0 and 0–1 transition, and are known to result from weakly coupled H-aggregates.34,35 The relative intensity of the 0–0 transition peak to the 0–1 transition peak, A0–0/A0–1, is related to the free exciton bandwidth W and can be used as a measure of the degree of crystallinity.36 Assuming a Huang–Rhys factor of 1,35 and a negligible change in refractive index for the two transitions,36W can be estimated using the equation
(1) |
c DTBP/vol% | Before spin-rinsing | After spin-rinsing | Retention factor r | ||
---|---|---|---|---|---|
A 0–0/A0–1 | W/meV | A 0–0/A0–1 | W/meV | ||
0 | 0.68 | 99 | — | — | 0.08 |
3 | 0.68 | 99 | — | — | 0.10 |
9 | 0.75 | 75 | 0.84 | 46 | 0.38 |
14 | 0.77 | 68 | 0.83 | 49 | 0.64 |
20 | 0.77 | 68 | 0.79 | 62 | 0.81 |
A retention factor r can be defined as the ratio of the areas under the absorption curve of the as-cast film and spin-rinsed film by integrating from 310 nm to 750 nm. The calculated values for the different films can be found with the absorption spectra in Fig. 1(f)–(g) and are listed in Table 1. We find that the film retention shows a clear dependence on the peroxide concentration, similar to the absorption peak ratio. While in the case of cDTBP = 3 vol% just 10% of the material remains on the substrate after spin-rinsing, this value increases to 38%, 64%, and 81% for a cDTBP of 9 vol%, 14 vol%, and 20 vol%, respectively. The fact that the spectrum of the spin-rinsed film of the cDTBP = 9 vol% sample shows a higher A0–0/A0–1 ratio than the as-cast sample gives evidence that the remaining, insolubilized material consists of a larger fraction of aggregated polymer, and primarily the non-aggregated, amorphous fraction of the film is washed away by the spin-rinsing process. As mentioned above, this results in a high A0–0/A0–1 of 0.83 in this case, while this ratio decreases for higher DTBP concentrations.
The fact that the film retention shows the same trend as the surface roughness, i.e. an increase with DTBP concentration, suggests that the larger aggregates are primarily responsible for the film becoming insoluble.
As well as from the altered optical absorption, the increased crystallinity caused by the DTBP addition is also evident from X-ray diffraction patterns. Fig. 3 shows the grazing incidence X-ray diffraction (GIXD) spectra of films of pristine P3HT as-cast and after annealing for 10 min at 150 °C, and of P3HT nanofibers formed in a solution with 14 vol% DTBP. All three samples feature a clear diffraction peak at an angle 2θ = 5.59° which can be assigned to the (100) reflection. The intensity of this reflection is highest for the P3HT + DTBP sample and additionally shows the (200) and (300) reflections, which are both absent for the untreated and annealed P3HT samples. Both facts prove the significantly higher degree of crystallinity of the nanofibers compared to the films without DTBP. Using Bragg's law, the distance between the (100) planes can be calculated to be 15.79 Å. It is known that P3HT preferably arranges in an “edge-on” structure, with the polymer chain axis parallel to the substrate surface.39 The flattened polymer chains form closely packed stacks by interaction of their π-systems along an axis parallel to the substrate surface, forming the fiber axis. A distance of 15.79 Å corresponds to the out-of-plane lamella stacking distance of P3HT in a Form I configuration, where the hexyl side chains are not interdigitating.39,40 The π-stacking distance of the polymer chains cannot be probed with the employed setup, but is known to be 3.8 Å for Form I P3HT.16,39 In contrast to the highly oriented fiber-films, annealing of the P3HT film does not lead to a significant increase of the (100) reflection, but results in a broad halo around 2θ = 20°, suggesting the formation of smaller and randomly oriented crystallites.
Fig. 3 Grazing incidence X-ray diffraction patterns of films (thickness ∼ 50 nm) of pristine P3HT, after annealing at 150 °C for 10 min, and spin-cast from a P3HT + DTBP solution. |
Significantly, also XPS measurements did not provide any indication for the incorporation of additional oxygen in the films upon addition of DTBP to the P3HT solution. In particular, Fig. 4(a) shows how the XPS spectrum of a pure P3HT film compares to a sample where DTBP was added to the solution. Both spectra are virtually identical, clearly showing signals that stem from the 2s and 2p electrons of the sulfur atoms and the carbon 1s signal. In both cases, no signal is detectable at an energy of 530 eV, where the oxygen 1s peak is expected. Furthermore, no sign of oxidation-related groups has been found both in the high resolution spectra of C 1s and S 2p regions for both the analyzed films (Fig. 4(b) and (c)).
Fig. 4 Wide scan XPS spectra of films spin-cast from solutions with and without DTBP. The arrows mark the signals that are known to stem from carbon and sulfur atoms. The gray arrow and label mark the position where the oxygen 1s signal is expected. Both spectra are virtually identical and show no indication of oxygen. As inset, the chemical structure of DTBP is shown. High resolution scans of the C 1s and S 2p peaks are shown in (b) and (c), respectively. The gray lines show the individual components of the peaks. The overall convolution is shown as black line. |
Differences of our data with respect to previous literature can be traced back to the different processing temperatures and concentrations, and different material used. Results by Gearba et al. were obtained from a solution with a peroxide concentration >70 radicals per monomer,30 equivalent to ∼40 vol% DTBP for a 10 mg ml−1 P3HT solution. That is significantly higher than the one in our work (cDTBP ≤ 20 vol%), and annealing above 100 °C was performed, rather than processing at room temperature. Such different conditions lead to observation of a blue-shift of the absorption rather than to a growth of a low-energy absorption shoulder, as in our case. However, we are able to observe a blue-shift of the spectrum when annealing our films at 170 °C and in DTBP vapor, which we interpret as an indication of oxidation. In addition, a lower concentration was needed in our case to achieve insolubilization of the layers. This is most likely connected to the different material used, mainly defined by the difference in molecular weight and regioregularity of the P3HT.
In summary, while none of the single pieces of evidence mentioned above provides conclusive evidence sufficient to say that no oxidation is induced by the DTBP, we consider that, taken together, these provide a convincing case to show that DTBP-induced oxidation effects, if any, play a minor role in the formation of P3HT insoluble fibers by this route which is instead driven by the so-called “poor solvent effect”. Device data, which we provide below, are entirely consistent with this scenario.
Fig. 5 (a) Transfer characteristics of field-effect transistors fabricated from P3HT solutions with different concentration of DTBP. (b) First derivative of the transfer characteristics shown in (a). (c) Gate-voltage dependence of the mobility for different DTBP concentrations, calculated from the second derivative of the transfer characteristics as shown in (a). |
In saturation regime, IDS is given by
(2) |
The second derivative of eqn (2) is the product of the constant ratio of the geometry parameters (Z/L) and the mobility μ. Using the second derivative of the experimental data therefore allows us to calculate the field-dependent mobility, shown in Fig. 5(c). Following the curves from positive to negative VGS, it can be seen that for a high DTBP concentration of 14 vol% and 20 vol% the mobility increases sharply at around +18 V and leads into a flat plateau, ranging from 0 V to −60 V. For pristine P3HT and a low DTBP concentration of 3 vol%, the onset occurs at around +10 V, and the following plateau is tilted. The 9 vol% case shows a somehow intermediate behavior, with an onset at ∼10 V and a mainly flat plateau.
A mobility which is independent of the gate voltage has been correlated to high structural order, as seen when comparing films spun from solvents with different boiling points.12 An increasing mobility with increasing gate voltage indicates a wide distribution of localized states below the mobility edge of trap states, which get filled with increasing carrier concentration. Clark et al. could show that a higher crystallinity results in a narrower trap distribution, hence the weaker dependence on the gate voltage.38
It is also very interesting to explore any correlation between mobility and structural parameters, as inferred from spectroscopy. To this end, in Fig. 6(a) we plot the individual values for μ, calculated from a linear fit of the data shown in Fig. 5(b), together with the absorption peak ratio A0–0/A0–1 taken from Fig. 1(f)–(j). The values for cDTBP = 0 vol% and cDTBP = 3 vol% are almost identical, 1.7 × 10−3 cm2 (V s)−1 and 1.8 × 10−3 cm2 (V s)−1, respectively. For higher DTBP concentration, μ starts to increase and reaches a value of 9.9 × 10−3 cm2 (V s)−1 for cDTBP = 20 vol%, a more than five-fold increase compared to the case of pure P3HT.
Fig. 6 (a) Mobility in dependence of DTBP concentration, obtained from a linear fit of the curves in Fig. 5(b), and absorption peak ratio A0–0/A0–1, obtained from the curves of the as-cast films (solid lines) in Fig. 1(f)–(j). (b) Schematic of the transistor channel, illustrating how bundles of nanofibers contribute to the charge transport. |
This increase in mobility can be attributed to the altered film morphology associated with the fiber formation discussed in the previous paragraphs. It is known that a high amount of polymer chains in an edge-on orientation can lead to high field-effect mobility.5 As shown by XRD images above, the polymer chains are highly ordered in π–π stacks along the fiber axis, which, when laid out flat on the surface, puts these polymer chains in an edge-on orientation. The correlation between crystalline quality and mobility can be seen when looking at the trend of the absorption peak ratio A0–0/A0–1 in Fig. 6(a). Interestingly, we note that A0–0/A0–1 increases significantly from 0 vol% up to 9 vol%, but that a further increase of the DTBP concentration changes this value only marginally, thus suggesting that the fraction of crystalline phase cannot be increased for concentrations greater than 9 vol%. It is intriguing, however, that the mobility keeps increasing beyond the 9 vol% concentration of DTBP, demonstrating that the mobility is a more sensitive probe of the molecular texture than the optical properties are. In particular, we interpret these data as an indication that in addition to the increase in mobility due to the increased average crystallinity also the formation of larger aggregates in the form of fiber networks, plays a significant role. Considering a maximum fiber length of about 2 μm, as shown in the AFM images above, and a channel length of 20 μm, it is clear that the charge transport cannot occur along just a single fiber, but will have to pass fiber junctions. These junctions can be of different type, either overlaps, contacts, or bifurcations, and it has been shown that the measured mobility obtained by field-effect transistor measurements is determined by a complex interplay between the size of the individual networks and the amount and type of junctions.33,42 The maximum size of the networks in our case can be estimated from the surface topography measurements discussed in Paragraph 2.1. We found that the bundles can be as large as ∼25 μm, i.e. a similar size as the length L of the transistor channel. Therefore, the interconnectivity of the fibers in form of fiber networks plays an important role for the performance of the thin-film transistor, which is illustrated in a cartoon in Fig. 6(b). Considering the increasing surface roughness with increasing cDTBP and the saturation behavior of the crystallinity, we conclude that the increase in mobility at concentrations cDTBP > 9 vol% is most likely to be due to the formation of larger fiber networks, which is beneficial for the charge transport over relatively large distances of several micrometers, consistent with an extensive study of charge transport in P3HT fiber networks by Newbloom and coworkers.33
Fig. 7 (a) Schematic of a bilayer solar cell as investigated in this study, comprising a ∼50 nm thick film of P3HT nanofibers as absorber layer, and a ∼25 nm thick layer of PCBM as electron-accepting layer. The materials are deposited subsequently from the same solvent (chlorobenzene). (b) Normalized absorption spectra of a P3HT/PCBM bilayer on fused silica similar to the one used as active layer in the device shown in (a), before and after annealing at 150 °C. The spectra are compared to a film of a P3HT:PCBM blend (ratio 1:0.8). The spectra are normalized to the local minimum at ∼395 nm. |
Fig. 8(a) shows the current density–voltage (J–V) characteristics of three devices with a structure as shown in Fig. 7(a), measured in dark conditions and under a 1000 W m−2 AM1.5 illumination. The samples were thermally treated in different ways, either annealed at 150 °C after deposition of the calcium/aluminum cathode (post-annealed), annealed after spin-casting the PCBM layer and before depositing the top contact (pre-annealed), or without any annealing step. In dark conditions, the pre-annealed and the post-annealed device show similar characteristics. Compared to the non-annealed device, it can be seen how annealing at 150 °C changes the slope of the J–V curve significantly. The current density in forward bias is significantly increased for both annealed devices, which can be attributed to an improved conduction path for charge extraction, and in particular for electrons owing to rearrangement of PCBM molecules near the interface to the P3HT phase and to the top-contact, as previously suggested.45,46 The redistribution of PCBM molecules upon annealing also results in a smoothened surface which allows a better contact to the anode and therefore a decreased contact resistance. The smoothening is expected to be more efficient for the pre-annealed device, resulting in a slightly increased current under dark conditions compared to the post-annealed one, although other effects such as specific interactions with the metal electrodes could also play a role.
Fig. 8 (a) Current density–voltage characteristics of solar cells with a structure as shown in Fig. 7(a), measured in dark conditions and under illumination by an AM1.5 solar simulator at 1000 W m−2. The devices were either not annealed, or annealed at 150 °C either after cathode deposition (post-annealed), or directly after spin-casting of the PCBM layer, before the cathode was deposited (pre-annealed). (b) External quantum efficiencies (EQE) of the devices shown in (a) and a typical EQE spectrum of a solar cell using a 1:0.8 blend of P3HT:PCBM as active layer. The spectra were normalized to allow a better comparison of the shape of the spectra. |
The improved electron transport also results in an increased fill factor for the post-annealed device compared to the non-annealed device from 40% to 44%, and an increased power conversion efficiency η from 1.3% to 1.6%. However, the short-circuit current (JSC) increases just slightly from 6.2 mA cm−2 to 6.8 mA cm−2, indicating that the charge-carrier generation rate is virtually unchanged. In the pre-annealed case, the performance is significantly improved, resulting in a fill factor of 52%, a JSC of 8.4 mA cm−2, and η = 2.3%. We consider that the higher JSC indicates a higher charge generation, caused by an increased P3HT/PCBM interface area, since a significant variation due to a difference in the charge extraction paths should also result in more prominent differences in the dark J–V characteristics than observed. This scenario is consistent with diffusion of PCBM into the P3HT phase, as also reported by Chen et al. by using neutron scattering techniques.8 Interestingly, the diffusion behavior is strongly influenced by the presence of the top contact, which presumably hinders the movement of the PCBM molecules upon annealing. It is also likely that intermixing already takes places during the deposition of PCBM due to swelling of P3HT in chlorobenzene and a partial removal of amorphous fraction.46
Further insight about the morphology can be extracted from the external quantum efficiency (EQE) of the devices, combined with previous literature establishing relevant correlations. Shown in Fig. 8(b) are the spectra for the three different devices discussed above (non-annealed, pre-annealed, post-annealed) in comparison to a typical EQE spectrum of a cell using a P3HT:PCBM (1:0.8) blend as active layer. The spectral shapes of the “bilayer” devices are almost identical, while they strongly differ from the blend device. The bilayer spectra feature a plateau between ∼400 nm and ∼600 nm, while the spectrum of the blend device has a pronounced maximum at ∼470 nm. This behavior is caused by a “filter effect” due to the relatively large thickness of the P3HT layer. Incoming light near the absorption maximum of P3HT gets absorbed more strongly before it can reach the P3HT/PCBM interface than light at around the low and high wavelength end of the absorption spectrum.47 In a blend layer, where the exciton-splitting donor–acceptor interface is distributed through the whole depth of the layer, this filter effect does not show up. It is therefore possible to take the shape of the EQE spectrum as an indicator for how much the morphology matches a “real” bilayer structure, i.e. how sharp the interface between donor and acceptor is.48Fig. 8(b) shows that there is virtually no difference in the shape of the pre-annealed and the post-annealed device. This indicates that the interdiffusion of the PCBM and P3HT layer happens near the interface, and the PCBM molecules cannot penetrate deeply into the P3HT layer, preserving the multilayer-structure to a large extent. This is in agreement with earlier findings that suggest that the diffusion of the PCBM molecules primarily takes place in the amorphous phase of the P3HT layer, resulting in a morphology similar to film cast from a blend solution already after just seconds of annealing at 150 °C.8 The high crystallinity of the P3HT in our case prevents this strong interdiffusion.
If kept at room temperature, no oxidation effects are apparent from either the UV-vis absorption spectra or XPS spectra in our work, but we do see evidence for oxidation when the films are annealed at 170 °C in DTBP vapor. Most importantly, field-effect transistor measurements powerfully corroborate this interpretation as they show no indication of additional trap states caused by the peroxide.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c3tc31284d |
This journal is © The Royal Society of Chemistry 2013 |