Issue 9, 2011

Fundamental aspects of surface engineering of transition metal oxide photocatalysts

Abstract

Many metal oxide photocatalysts exhibit strong variations in their photocatalytic activities as a function of their crystallographic surface orientation. In this Perspective possible fundamental reasons for the surface dependent photocatalytic properties are discussed. The majority of the data imply that the differing surface activities for photo-oxidation and -reduction reactions are mainly a consequence of electron and hole diffusion towards different surfaces. This is either due to directional charge carrier diffusion as a result of bulk anisotropies or it is a consequence of differing band bending (or flat band potentials) at the interface of the photocatalyst with its environment. Although the fundamental reason for the surface electronic structure must lie in the surface structure, no correlation between surface chemical properties and photochemical properties has yet been unambiguously determined. The importance of surface charge separation and charge trapping at the surface leads to new concepts for engineering surface properties with potentially increased photocatalytic activity. Consequently, enhancement can be achieved by synthesizing photocatalyst powders that expose surfaces with ‘naturally’ higher photoactivity; or in a proposed approach by modifying surfaces selectively with special surface phases or monolayer heterostructures that enhance charge separation at the surface. In addition, special surface phases with a narrowed band gap may enable visible light activity of otherwise only UV active bulk materials.

Graphical abstract: Fundamental aspects of surface engineering of transition metal oxide photocatalysts

Article information

Article type
Perspective
Submitted
29 Apr 2011
Accepted
31 May 2011
First published
12 Jul 2011

Energy Environ. Sci., 2011,4, 3275-3286

Fundamental aspects of surface engineering of transition metal oxide photocatalysts

M. Batzill, Energy Environ. Sci., 2011, 4, 3275 DOI: 10.1039/C1EE01577J

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