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Atomic layer deposition of ruthenium at 100 [degree]C using …
Atomic layer deposition of ruthenium at 100 [degree]C using the RuO4-precursor and H2
Atomic layer deposition of ruthenium at 100 [degree]C using the RuO4-precursor and H2
Article, Chapter
Authors: Matthias M. Minjauw
Publication: Journal of Materials Chemistry C, Volume:3, Issue:1, Page(s):132-137
Published: 2014-12-04
ISSN: 2050-7526
DOI: 10.1039/C4TC01961J
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View Full Text Source:Journal of Materials Chemistry C,Journal of Materials Chemistry C,RSC Gold Collection excluding journal archive '1841-2007' 2022 Opens in new Window
Journal:  Journal of Materials Chemistry C Source:RSC Gold Collection excluding journal archive '1841-2007' 2022 Opens in new Window
Collection:  RSC Gold Collection excluding journal archive '1841-2007' 2022 Opens in new Window
Coverage:
  • 2013~present; ;issue:1~present
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