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Issue 35, 2017
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Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

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Abstract

A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3′-dialkyl-5,5′-bithiazolidinylidene-2,2′-dione-4,4′-dithiones (OS-R) and their sulfur analogues, 3,3′-dialkyl-5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S–S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors.

Graphical abstract: Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

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Publication details

The article was received on 27 Jun 2017, accepted on 15 Aug 2017 and first published on 16 Aug 2017


Article type: Paper
DOI: 10.1039/C7TC02886E
Citation: J. Mater. Chem. C, 2017,5, 9121-9127
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    Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

    K. Iijima, Y. Le Gal, T. Higashino, D. Lorcy and T. Mori, J. Mater. Chem. C, 2017, 5, 9121
    DOI: 10.1039/C7TC02886E

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