Issue 24, 2017

High-quality single-layer nanosheets of MS2 (M = Mo, Nb, Ta, Ti) directly exfoliated from AMS2 (A = Li, Na, K) crystals

Abstract

Layered transition metal dichalcogenides (TMDs) such as MoS2 have attracted considerable interest as two-dimensional materials because of their unique physical and chemical properties. Single or few-layer TMD nanosheets can be achieved by conventional Li intercalation methods through organolithium chemistry or electrochemistry. However, these methods are hampered by the low yield, mixed phases and a lot of defects inside the nanosheets. Here we develop a novel general strategy to prepare single-layer TMD nanosheets by using AMS2 (A = Li, Na, K; M = Mo, Nb, Ta, Ti) crystals as ideal precursors. The crystal structure of these compounds ensures the robust S–M–S layers and fully filled alkali atoms between them, which lead to a high-yield production of high-quality single-layer nanosheets by following chemical exfoliation. Surprisingly, MoS2 nanosheets obtained by LiMoS2 crystals show a high-quality 1T′ phase, while the widely used n-butyl lithium method can only prepare phase-mixed (2H, 1T, 1T′) nanosheets with abundant defects. The as-prepared 1T′ MoS2 nanosheets exhibit a remarkable electrical conductivity (618 S cm−1), which is much higher than that of MoS2 nanosheets (35.4 S cm−1) obtained using the n-butyl lithium method, also the highest value in MoS2 related materials and superior to the best value of the reported 2D films of graphene (550 S cm−1).

Graphical abstract: High-quality single-layer nanosheets of MS2 (M = Mo, Nb, Ta, Ti) directly exfoliated from AMS2 (A = Li, Na, K) crystals

Supplementary files

Article information

Article type
Paper
Submitted
24 Feb 2017
Accepted
15 May 2017
First published
17 May 2017

J. Mater. Chem. C, 2017,5, 5977-5983

High-quality single-layer nanosheets of MS2 (M = Mo, Nb, Ta, Ti) directly exfoliated from AMS2 (A = Li, Na, K) crystals

C. Guo, H. Li, W. Zhao, J. Pan, T. Lin, J. Xu, M. Chen and F. Huang, J. Mater. Chem. C, 2017, 5, 5977 DOI: 10.1039/C7TC00838D

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