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Issue 4, 2016
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Efficient silicon quantum dots light emitting diodes with an inverted device structure

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Abstract

We use silicon quantum dots (SiQDs) with an average diameter of 2.6 ± 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (∼3.1 eV) cathode and MoO3/Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at ∼700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%.

Graphical abstract: Efficient silicon quantum dots light emitting diodes with an inverted device structure

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Publication details

The article was received on 25 Sep 2015, accepted on 27 Oct 2015 and first published on 12 Nov 2015


Article type: Paper
DOI: 10.1039/C5TC03064A
Citation: J. Mater. Chem. C, 2016,4, 673-677
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    Efficient silicon quantum dots light emitting diodes with an inverted device structure

    L. Yao, T. Yu, L. Ba, H. Meng, X. Fang, Y. Wang, L. Li, X. Rong, S. Wang, X. Wang, G. Ran, X. Pi and G. Qin, J. Mater. Chem. C, 2016, 4, 673
    DOI: 10.1039/C5TC03064A

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