Issue 16, 2015

Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

Abstract

We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V−1 s−1.

Graphical abstract: Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

Supplementary files

Article information

Article type
Communication
Submitted
09 Jan 2015
Accepted
10 Mar 2015
First published
11 Mar 2015

J. Mater. Chem. C, 2015,3, 3842-3847

Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

Y. Xi, M. I. Serna, L. Cheng, Y. Gao, M. Baniasadi, R. Rodriguez-Davila, J. Kim, M. A. Quevedo-Lopez and M. Minary-Jolandan, J. Mater. Chem. C, 2015, 3, 3842 DOI: 10.1039/C5TC00062A

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