Issue 43, 2014

A study on the influence of local doping in atomic layer deposited Al:ZnO thin film transistors

Abstract

Local doping of Al:ZnO into a ZnO matrix was performed vertically at various positions in a thin film using atomic layer deposition, and its influence was investigated by analyzing thin film transistor (TFT) characteristics. The position specific dopant distribution in the films was confirmed by high resolution transmission electron microscopy. It was found that doping specific locations in the active channel layer of a TFT had a different impact on its electrical characteristics. When near the semiconductor/gate dielectric interface, doping had a significant impact on the mobility of the TFT devices, which showed a gradual recovery as the doped region was moved away from the interface. The original characteristics of the device were almost completely restored once the doped region was moved more than 15 nm away from the interface, and when moved further away the output characteristics portrayed a shift in threshold voltage while preserving all other electrical characteristics. Various doping concentrations were implemented in regions both near and far away from the interface to gain a better understanding of the phenomena. The experimental results given here imply that the geographical position of doping is as important as selecting a dopant material in the device optimization of TFTs.

Graphical abstract: A study on the influence of local doping in atomic layer deposited Al:ZnO thin film transistors

Supplementary files

Article information

Article type
Paper
Submitted
05 Aug 2014
Accepted
11 Sep 2014
First published
11 Sep 2014

J. Mater. Chem. C, 2014,2, 9274-9282

A study on the influence of local doping in atomic layer deposited Al:ZnO thin film transistors

Y. J. Chung, W. J. Choi, S. G. Kang, C. W. Lee, J. Lee, K. Kong and Y. K. Lee, J. Mater. Chem. C, 2014, 2, 9274 DOI: 10.1039/C4TC01727G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements