Long wavelength emissions of Se4+-doped In2O3 hierarchical nanostructures

Abstract

Se⁴⁺-doped cubic-structured In₂O₃ hierarchical nanostructures have been synthesized by controllable thermal oxidation of In₃Se₄ nanostructures. The synthesized nanostructures preserve the original hierarchical morphology of In₃Se₄ nanosheet-assembled nanostructures. Moreover, the In₃Se₄ single crystalline nanosheets can be transformed into Se⁴⁺-doped In₂O₃ polycrystalline structures consisting of interconnected nanoparticles. The photoluminescence property measurements show that the Se⁴⁺-doped In₂O₃ hierarchical nanostructures have red light emissions centered at 630, 670, and 770 nm and near infrared emissions centered at 910 nm, which is ascribed to the Se⁴⁺ doping.