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Issue 13, 2014
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In–Ga–Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

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Abstract

Indium–gallium–zinc oxide (IGZO) nanoparticles that can act as an oxide semiconductor were successfully synthesized using a coprecipitation method via the hydrolysis of urea in aqueous media containing ethylene glycol. The resulting IGZO precursor nanoparticles contain crystalline indium hydroxide and zinc–gallium carbonate. Sintering the precursor nanoparticles at temperatures higher than 300 °C provides amorphous IGZO nanoparticles, while poly-crystalline IGZO nanoparticles are obtained at temperatures above 700 °C. Poly-crystalline IGZO ink was prepared using the IGZO nanoparticles for the fabrication of a thin film transistor (TFT). Annealing at temperatures higher than 400 °C for 30 min gives the desired TFT switching properties due to the removal of the organic fraction contained in the ink.

Graphical abstract: In–Ga–Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

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Publication details

The article was received on 04 Oct 2013, accepted on 10 Jan 2014 and first published on 13 Jan 2014


Article type: Paper
DOI: 10.1039/C3TC31944J
Citation: J. Mater. Chem. C, 2014,2, 2448-2454
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    In–Ga–Zn oxide nanoparticles acting as an oxide semiconductor material synthesized via a coprecipitation-based method

    N. Fukuda, Y. Watanabe, S. Uemura, Y. Yoshida, T. Nakamura and H. Ushijima, J. Mater. Chem. C, 2014, 2, 2448
    DOI: 10.1039/C3TC31944J

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