Issue 44, 2013

High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing

Abstract

We studied the thin film heterojunction photodiode made of nickel oxide (NiO) and zinc oxide (ZnO) deposited by low cost energy-efficient sol–gel spin coating. The highly visible-transparent heterojunction photodiode with a smooth interface gives rise to a good photoresponse and quantum efficiency under ultra-violet (UV) light illumination. With an applied reverse bias of 5 V, a very impressive peak photo responsivity of 21.8 A W−1 and an external quantum efficiency (EQE) of 88% at an incident light wavelength of 310 nm were accomplished.

Graphical abstract: High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing

Supplementary files

Article information

Article type
Paper
Submitted
24 Jul 2013
Accepted
02 Sep 2013
First published
03 Sep 2013

J. Mater. Chem. C, 2013,1, 7333-7338

High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing

N. Park, K. Sun, Z. Sun, Y. Jing and D. Wang, J. Mater. Chem. C, 2013, 1, 7333 DOI: 10.1039/C3TC31444H

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