Issue 28, 2013

Spectroscopic investigation of the hole states in Ni-deficient NiO films

Abstract

The influence of Ni vacancies on the chemistry and electronic structure of NiO thin films was investigated using X-ray absorption spectroscopy and extended X-ray absorption fine structure analysis. Changes in the electronic structures upon partial oxidation are mainly addressed. It is strongly suggested that the hole carriers are mostly delocalized on oxygen sites while localized holes coexist at both Ni and O sites. Such delocalized carriers are found to be depleted by capping with a thin n-type TiO2 layer. This suggests that the defect states can be healed effectively by the TiO2 capping and its density can be tuned for functionality as a base p-type oxide material. The relationship with threshold resistive switching behavior is also discussed.

Graphical abstract: Spectroscopic investigation of the hole states in Ni-deficient NiO films

Article information

Article type
Paper
Submitted
13 Apr 2013
Accepted
09 May 2013
First published
10 May 2013

J. Mater. Chem. C, 2013,1, 4334-4338

Spectroscopic investigation of the hole states in Ni-deficient NiO films

D. Cho, S. J. Song, U. K. Kim, K. M. Kim, H. Lee and C. S. Hwang, J. Mater. Chem. C, 2013, 1, 4334 DOI: 10.1039/C3TC30687A

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