Issue 25, 2013
From the journal:

Journal of Materials Chemistry C

Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

Frederik Goethals,a   Elisabeth Levrau,b   Glenn Pollefeyt,a   Mikhail R. Baklanov,c   Ivan Ciofi,c   Kris Vanstreels,c   Christophe Detavernier,b   Isabel Van Driesschea  and  Pascal Van Der Voort*a  

* Corresponding authors

a Ghent University, Department of inorganic and physical chemistry, Krijgslaan 281 (S3), 9000 Ghent, Belgium
E-mail: pascal.vandervoort@ugent.be
Fax: +329 264 49 83
Tel: +329 264 44 42

b Ghent University, Department of solid state sciences, Krijgslaan 281 (S1), 9000 Ghent, Belgium

c IMEC, Kapeldreef 75, 3001 Heverlee, Belgium

Abstract

In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.

Graphical abstract: Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

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Article information

DOI
https://doi.org/10.1039/C3TC30522H
Article type
Paper
Submitted
20 Mar 2013
Accepted
23 Apr 2013
First published
23 Apr 2013

J. Mater. Chem. C, 2013,1, 3961-3966

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Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

F. Goethals, E. Levrau, G. Pollefeyt, M. R. Baklanov, I. Ciofi, K. Vanstreels, C. Detavernier, I. Van Driessche and P. Van Der Voort, J. Mater. Chem. C, 2013, 1, 3961 DOI: 10.1039/C3TC30522H

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