Issue 2, 2015
From the journal:

Journal of Materials Chemistry A

Correction: Plasma enhanced atomic layer deposition of Ga2O3 thin films

Ranjith K. Ramachandran,a   Jolien Dendooven,a   Jonas Botterman,b   Sreeprasanth Pulinthanathu Sree,c   Dirk Poelman,b   Johan A. Martens,c   Hilde Poelmand  and  Christophe Detavernier*a  

* Corresponding authors

a Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
E-mail: Christophe.detavernier@ugent.be
Fax: +32-9-264-4996
Tel: +32-9-264-4354

b Department of Solid State Sciences, LumiLab, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium

c Centre for Surface Chemistry and Catalysis, Catholic University of Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium

d Laboratory for Chemical Technology, Ghent University, Technologiepark 914, B-9052 Zwijnaarde, Belgium

Abstract

Correction for ‘Plasma enhanced atomic layer deposition of Ga2O3 thin films’ by Ranjith K. Ramachandran et al., J. Mater. Chem. A, 2014, 2, 19232–19238.

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Article information

DOI
https://doi.org/10.1039/C4TA90219J
Article type
Correction
Submitted
27 Nov 2014
Accepted
27 Nov 2014
First published
02 Dec 2014
This article is Open Access
Creative Commons BY license

J. Mater. Chem. A, 2015,3, 916-916

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Correction: Plasma enhanced atomic layer deposition of Ga2O3 thin films

R. K. Ramachandran, J. Dendooven, J. Botterman, S. P. Sree, D. Poelman, J. A. Martens, H. Poelman and C. Detavernier, J. Mater. Chem. A, 2015, 3, 916 DOI: 10.1039/C4TA90219J

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