Issue 1, 2007

Patterning micron-sized features in a cross-linked poly(acrylic acid) film by a wet etching process

Abstract

This paper describes a photolithographic method to create sub-micron-scale patterns of cation-cross-linked poly(acrylic acid) (CCL-PAA). PAA can be cross-linked with a wide range of metal cations—including, but not limited to, Ag+, Ca2+, Pd2+, Al3+, La3+, and Ti4+. Upon patterning a positive photoresist (diazonaphthoquinone-novolac resin) on a film of CCL-PAA, the exposed regions of CCL-PAA were etched by either an aqueous NaOH or EDTA solution. The initial cross-linking cation could be exchanged for a second cation that could not be patterned photolithographically. We used these patterned films of CCL-PAA i) to host and template the reduction of metallic cations to metallic nanoparticles, and ii) to fabricate porous, low-k dielectric substrates.

Graphical abstract: Patterning micron-sized features in a cross-linked poly(acrylic acid) film by a wet etching process

Supplementary files

Article information

Article type
Paper
Submitted
11 Aug 2006
Accepted
20 Oct 2006
First published
23 Nov 2006

Soft Matter, 2007,3, 108-116

Patterning micron-sized features in a cross-linked poly(acrylic acid) film by a wet etching process

A. Winkleman, R. Perez-Castillejos, M. Lahav, M. Narovlyansky, L. N. J. Rodriguez and G. M. Whitesides, Soft Matter, 2007, 3, 108 DOI: 10.1039/B611630B

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