Correction: A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification
Abstract
Correction for ‘A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification’ by Hailing Liu et al., RSC Adv., 2018, 8, 25514–25518.
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* Corresponding authors
a
Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea
E-mail:
jwjung@sejong.ac.kr
b Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea
c Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
d Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejon 305-600, Korea
Correction for ‘A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification’ by Hailing Liu et al., RSC Adv., 2018, 8, 25514–25518.
H. Liu, S. Hussain, A. Ali, B. A. Naqvi, D. Vikraman, W. Jeong, W. Song, K. An and J. Jung, RSC Adv., 2018, 8, 28692 DOI: 10.1039/C8RA90067A
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