Selective and confined growth of transition metal dichalcogenides on transferred graphene

Abstract

We demonstrate confinement of CVD grown MoS₂ to a patterned graphene area, forming a vertically stacked 2D heterostructure. The CVD-grown graphene had been transferred onto a Si wafer and patterned using photolithography. Raman mapping and spectral analysis reveal few-layer MoS₂ grew selectively on graphene regions, and not on the surrounding SiO₂ substrate surface. We also report CVD growth of WS₂ directly on transferred graphene. Unlike MoS₂, no few-layer regions were found; the WS₂ was found to be either monolayer or at least five layers (bulk). The WS₂ coverage was only partial, but selectivity to graphene is apparent. These findings have the potential to significantly advance fabrication of vertical 2D heterostructures and related devices, and suggest the selective growth on graphene may be applicable to TMDCs in general.