Issue 42, 2017

Structural, optical and electronic properties of a Mg incorporated GaN nanowall network

Abstract

We report the growth of a Mg incorporated GaN nanowall network (NwN) by using a plasma assisted molecular beam epitaxy (PA-MBE) system that was characterized by photoluminescence (PL) spectroscopy, Raman spectroscopy, high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). We record a PL enhancement (≈3.2 times) in nominally and moderately Mg incorporated GaN compared to that of an undoped NwN. Two distinct (and broad) blue luminescence peaks appear at 2.95 and 2.70 eV for the heavily Mg incorporated (1020 atoms per cm3) GaN, of which the 2.95 eV peak is sensitive to annealing. The incorporated Mg concentration is estimated to be 1020 atoms per cm3 while retaining its band edge emission at ≈3.4 eV. XPS valence band spectra shows a shift in the Fermi level towards Valence Band Maximum (VBM) and the increase in Mg flux confirms the formation of p-type GaN. Mg accumulation at the nanowall surface and the GaN/Al2O3 interface was observed from SIMS measurements.

Graphical abstract: Structural, optical and electronic properties of a Mg incorporated GaN nanowall network

Supplementary files

Article information

Article type
Paper
Submitted
24 Feb 2017
Accepted
24 Apr 2017
First published
15 May 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 25998-26005

Structural, optical and electronic properties of a Mg incorporated GaN nanowall network

S. K. Nayak, M. Gupta and S. M. Shivaprasad, RSC Adv., 2017, 7, 25998 DOI: 10.1039/C7RA02315D

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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