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Issue 113, 2016, Issue in Progress
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Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film

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Abstract

The effect of a MoO3 buffer layer inserted between 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The high work function of the MoO3 buffer layer bends the electronic structure of C8-BTBT upward toward the interface, and thus reduces the hole injection barrier to 0.97 eV, facilitating the hole injection from the Co electrode to C8-BTBT via electron extraction from the highest occupied molecular orbital of C8-BTBT through the low-lying conduction band of MoO3. Desulfurization reaction of C8-BTBT by cobalt is also eliminated by the MoO3 buffer layer. These effects illustrate the significance of a MoO3 buffer layer on interface energy level alignment and provide important insight into device design, fabrication and possible direction to improve the performance of C8-BTBT/Co-based organic spin valves.

Graphical abstract: Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film

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Publication details

The article was received on 27 Sep 2016, accepted on 22 Nov 2016 and first published on 22 Nov 2016


Article type: Paper
DOI: 10.1039/C6RA23981A
Citation: RSC Adv., 2016,6, 112403-112408
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    Effect of a MoO3 buffer layer between C8-BTBT and Co(100) single-crystal film

    M. Zhu, L. Lyu, D. Niu, H. Zhang, S. Wang and Y. Gao, RSC Adv., 2016, 6, 112403
    DOI: 10.1039/C6RA23981A

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