Jump to main content
Jump to site search

Issue 18, 2016
Previous Article Next Article

Nanostructured Si@C/NiCo2O4 heterostructures for a high performance supercapacitor

Author affiliations

Abstract

As the second most abundant element on the earth, silicon exhibits excellent properties in many fields. Silicon hybrid transition metal oxides possess a low mass density and high specific capacity. To achieve the uniform dispersion of silicon in a composite, a nanostructured Si@C/NiCo2O4 heterostructure is fabricated via a facial hydrothermal method with silicon nanoslices encapsulated in polyacrylonitrile (PAN). The urchin-like Si@C/NiCo2O4 electrode exhibits excellent electrochemical properties, an efficient electron and ion transport pathway as well as the unique hybrid structure, which is useful to enhance the specific capacitance and present excellent cyclic stability (only 5.9% loss at 10 A gāˆ’1 after 2500 cycles). The outstanding electrochemical energy storage properties of the Si@C/NiCo2O4 heterostructures show great potential for the next generation high-performance supercapacitors.

Graphical abstract: Nanostructured Si@C/NiCo2O4 heterostructures for a high performance supercapacitor

Back to tab navigation

Publication details

The article was received on 10 Dec 2015, accepted on 27 Jan 2016 and first published on 29 Jan 2016


Article type: Paper
DOI: 10.1039/C5RA26391C
Citation: RSC Adv., 2016,6, 15137-15142
  •   Request permissions

    Nanostructured Si@C/NiCo2O4 heterostructures for a high performance supercapacitor

    J. Guo, Z. Dai, X. Zang, W. Si, W. Huang and X. Dong, RSC Adv., 2016, 6, 15137
    DOI: 10.1039/C5RA26391C

Search articles by author

Spotlight

Advertisements