Issue 16, 2015

A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells

Abstract

The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported. The gallium arsenide films were analysed by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Powder XRD showed that cubic polycrystalline GaAs had been deposited with films grown at the higher temperatures having a Ga to As ratio of 1 : 1. EDX mapping, XPS depth profiling and SIMS showed that the films contained low levels of contaminants. The method described shows the formation of GaAs films with increasing crystallinity and stoichiometry reaching unity with increasing deposition temperature.

Graphical abstract: A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells

Supplementary files

Article information

Article type
Paper
Submitted
05 Nov 2014
Accepted
12 Jan 2015
First published
21 Jan 2015

RSC Adv., 2015,5, 11812-11817

Author version available

A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells

S. Sathasivam, R. R. Arnepalli, K. K. Singh, R. J. Visser, C. S. Blackman and C. J. Carmalt, RSC Adv., 2015, 5, 11812 DOI: 10.1039/C4RA13902J

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